Infineon Technologies Ag

Infineon Technologies Austria Ag

Renate Hofmann

Carsten Ahrens

Alexander Glas

Wolfgang Klein

Matthias Stecher

Joerg Busch

Horst Theuss

Jens G Pohl

Klaus Elian

In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.

Integrated circuits with magnetic core inductors and methods of fabrications thereof

A semiconductor package includes a semiconductor chip, an inductor applied to the semiconductor chip. The inductor includes at least one winding. A space within the at least one winding is filled with a magnetic material.

Semiconductor package and method for fabricating the same

A power semiconductor IC device is disclosed. In one embodiment, the device includes a substrate, and a layer structure formed on the substrate. The layer structure includes a metallization layer including copper, wherein the metallization layer is formed as a stack structure including at least two copper layers and a stabilization layer between the two copper layers.

Metallization layer for a power semiconductor device

Semiconductor components having a semiconductor body which includes a semiconductor base surface have to be sealed with a molding compound in order to protect against moisture or heat. Mechanical interlocking of the molding compound to the semiconductor base surface is achieved by means of at least one interlocking structure. This may be either a horizontal interlocking structure for mechanically interlocking the molding compound to the semiconductor base surface in the direction which is horizontal with respect to the semiconductor base surface and/or a vertical interlocking structure for mechanically interlocking the molding compound to the semiconductor base surface in the direction which is vertical with respect to the semiconductor base surface.

Growing community of inventors

Wuppertal, Germany

Renate Hofmann