Taiwan Semiconductor Manufacturing Comp. Ltd.

Ren-Jie Lin

Dun-Nian Yaung

Jen-Cheng Liu

Keng-Yu Chou

Chun-Hao Chuang

Tzu-Jui Wang

Ming-Chieh Hsu

Chia-Shiung Tsai

Ching-Chun Wang

Shou-Gwo Wuu

Yeur-Luen Tu

Yueh-Chuan Lee

Chia-Chan Chen

Jung-I Lin

Ta-Hsin Chen

Chih-Huang Li

Yuer-Luen Tu

A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.

Pixel structure of image sensor having dielectric layer surrounding photo conversion layer and color filter

Pixel structure of image sensor and method of forming same

A method for forming an image sensor device on a substrate is disclosed. The method includes (a) recessing a portion of the substrate thereby forming a first shallow trench; (b) forming a spacer layer surrounding at least part of a sidewall of the first shallow trench; and (c) forming a first deep trench that extends below the first shallow trench by further recessing the substrate while using the spacer layer as a mask.

Method for forming image sensor device

A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filter layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.

Photo diode and method of forming the same

A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.

The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Backside illuminated sensor processing

The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer has a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Growing community of inventors

Tainan, Taiwan

Ren-Jie Lin