Taiwan Semiconductor Manufacturing Comp. Ltd.

Ren-Hao Jheng

Yu Ju- Chen

Wen-Pin Ho

S P Cheng

Yu-Ping Tseng

Chung-Wei Huang

Ya-Hsin Tseng

The present disclosure describes a method for substrate storage. The method can include respectively placing a plurality of substrates into a plurality of slots formed by a plurality of fin structures on a panel of a storage device. The method can further include binding each of the plurality of substrates to an corresponding one of the plurality of fin structures. The method can further include moving the storage device from a first location to a second location. The method can further include un-binding the plurality of substrates from the plurality of fin structures.

Semiconductor wafer storage device

A chemical mechanical polishing (CMP) apparatus includes a polishing pad located on a top surface of a platen configured to rotate around a vertical axis passing through the platen, a wafer carrier configured to hold a substrate on a bottom surface thereof and to press the substrate on a top surface of the polishing pad, a slurry dispenser configured to dispense slurry over the top surface of the polishing pad, and a pad conditioning unit comprising a pad conditioning disk and a conditioning head configured to hold the pad conditioning disk. The conditioning head includes an electromagnet and the pad conditioning disk comprises a first ferromagnetic material portion configured to be attracted to the electromagnet when the electromagnet is energized.

Chemical mechanical polishing apparatus using a magnetically coupled pad conditioning disk

The present disclosure provides an apparatus and a method for polishing a semiconductor substrate in semiconductor device manufacturing. The apparatus can include: a carrier configured to hold the substrate; a polishing pad configured to polish a first surface of the substrate; a chemical mechanical polishing (CMP) slurry delivery arm configured to dispense a CMP slurry onto the first surface of the substrate; and a pad conditioner configured to condition the polishing pad. In some embodiments, the pad conditioner can include: a conditioning disk configured to scratch the polishing pad; a conditioning arm configured to rotate the conditioning disk; a plurality of magnetic screws configured to secure the conditioning disk onto the conditioning arm and including a respective plurality of screw heads; and a plurality of blocking devices respectively positioned beneath the plurality of screw heads and configured to block debris particles from entering exiting a respective plurality of screw holes.

Chemical mechanical polishing apparatus

A method of monitoring a chemical mechanical polishing (CMP) apparatus including an arm configured to swing a polishing component includes performing a CMP process; learning at least two positions of the polishing component during a normal swing motion of the polish component by an optical acceptor and a processing unit to determine a plurality of expected positions of the polish component; analyzing at least one real position of the polishing component at predetermined time points during the CMP process by the optical acceptor and the processing unit; inspecting whether an abnormal event occurs based on the analyzed real position of the polishing component and the expected positions by the processing unit during the CMP process; and determining whether to send an alarm and stop the CMP process based on the inspecting result.

Method and apparatus for monitoring chemical mechanical polishing process

The present disclosure describes a device and a method for substrate storage. The device can include a first and a second groups of panels configured to form an enclosed volume, and fin structures disposed at inner surfaces of the second group of panels. Each of the fin structures can be configured to hold a substrate. Each fin structure can include a protrusion extending inwardly into the enclosed volume and a binding device disposed over the protrusion. The binding device can be configured to bind the substrate over the protrusion.

A method for CMP is provided. The method includes the following operations. A semiconductor wafer is received. The semiconductor wafer is polished. In some embodiments, a residue is generated during polishing the semiconductor wafer and the residue attaches to a surface of a conditioning disk disposed on a dresser head. The dresser head and the conditioning disk are moved back and forth between a refuge position and a working region by the dresser arm during polishing the semiconductor wafer. The surface of the conditioning disk is scanned to remove the residue using a laser scanner when the dresser head and the conditioning disk are in refuge position.

Growing community of inventors

Hsinchu County, Taiwan

Ren-Hao Jheng