Taiwan Semiconductor Manufacturing Comp. Ltd.

Ren-Guei Lin

Sheng-Chen Wang

Jung-Yu Li

Feng-Inn Wu

Shu-Bin Hsu

A method includes supplying slurry onto a polishing pad; holding a wafer against the polishing pad with a piezoelectric layer interposed vertically between a pressure unit and the wafer; exerting a force on the piezoelectric layer using the pressure unit to make the piezoelectric layer directly press the wafer; generating, using the piezoelectric layer, a first voltage corresponding to a first portion of the wafer and a second voltage corresponding to a second portion of the wafer; tuning the force exerted on the piezoelectric layer according to the first voltage and the second voltage; and polishing, using the polishing pad, the wafer.

Polishing head, chemical-mechanical polishing system and method for polishing substrate

A method includes supplying slurry onto a polishing pad. A wafer is held against the polishing pad with a first piezoelectric layer interposed between a pressure unit and the wafer. A first voltage generated by the first piezoelectric layer is detected. The wafer is pressed, using the pressure unit, against the polishing pad according to the detected first voltage generated by the first piezoelectric layer. The wafer is polished using the polishing pad.

A polishing head includes a carrier head and a plurality of pressure units arranged on the carrier head. At least two of the pressure units are located on the same circumferential line relative to a center axis of the carrier head.

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Taichung, Taiwan

Ren-Guei Lin