Applied Materials, Inc.

Applied Material, Inc.

Ren-Guan Duan

Jennifer Y Sun

Kenneth S Collins

Li Xu

Jie Yuan

Juan Carlos Rocha-Alvarez

Jianhua Zhou

Senh Thach

Dmitry Lubomirsky

Biraja Prasad Kanungo

Thomas Allen Graves

Sanjeev Baluja

Kalyanjit Ghosh

Thorsten B Lill

Amit Kumar Bansal

Jay D Pinson, Ii

Abdul Aziz Khaja

Benjamin Schwarz

Sumanth Banda

Xiaoming He

Abhijit Basu Mallick

Andrew Nguyen

Hiroji Hanawa

Ganesh Balasubramanian

Deenesh Padhi

Kallol Bera

Bok Hoen Kim

Kwangduk Douglas Lee

Hamid Noorbakhsh

Mukund Srinivasan

Hari K Ponnekanti

Prashant Kumar Kulshreshtha

Ajit Balakrishna

Yihong Chen

Canfeng Lai

Zheng John Ye

Ramprakash Sankarakrishnan

Praket Prakash Jha

Mayur G Kulkarni

Sudhir R Gondhalekar

Xing Lin

Sungwon Ha

Kaushik Comandoor Alayavalli

Sumit Agarwal

Swayambhu Prasad Behera

Akshay Dhanakshirur

Sathya Swaroop Ganta

Ningli Liu

Wei Min Chan

Jason K Foster

Uwe Paul Haller

Job George Konnoth Joseph

Bushra Afzal

Lei Guo

Anil Kumar Kalal

Gregory Siu

Junhan Yuh

Abhishek Pandey

A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Magnetic-material shield around plasma chambers near pedestal

Certain embodiments of the present disclosure relate to ceramic materials with high thermal shock resistance and high erosion resistance. In one embodiment, a ceramic material is formed from a composition comprising AlO, MgO, SiO.

Ceramic material with high thermal shock resistance and high erosion resistance

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide

Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.

Plasma corrision resistive heater for high temperature processing

A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.

Heat treated ceramic substrate having ceramic coating

A method of forming a radio frequency (RF) strap for use in a process chamber is provided. The method includes positioning a core strap including a first material that is electrically and thermally conductive in a first electrochemical bath. The first electrochemical bath includes a first solvent and a first plating precursor. The method further includes forming a first protective coating on an outer surface of the core strap, removing the first solvent and the first plating precursor from the core strap having the first protective coating formed thereon, post-treating the core strap having the first protective coating formed thereon, positioning the core strap having the first protective coating formed thereon in a second electrochemical bath, and forming a second protective coating on an outer surface of the first protective coating. The first protective coating includes nickel, the second electrochemical bath includes a second solvent and a second plating precursor, and the second protective coating includes gold.

Processing equipment component plating

Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content &#x3a3; D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (AlO), aluminum nitride (AlN), yttrium oxide (YO), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

High temperature electrostatic chuck bonding adhesive

Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

Chamber liner for high temperature processing

Method of forming a bulk article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide

Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide

Implementations described herein generally relate to materials and coatings, and more specifically to materials and coatings for aluminum and aluminum-containing chamber components. In one implementation, a process is provided. The process comprises exposing an aluminum-containing component to a moisture thermal treatment process and exposing the aluminum-containing component to a thermal treatment process. The moisture thermal treatment process comprises exposing the aluminum-containing component to an environment having a moisture content from about 30% to about 100% at a first temperature from about 30 to about 100 degrees Celsius. The thermal treatment process comprises heating the aluminum-containing component to a second temperature from about 200 degrees Celsius to about 550 degrees Celsius to form an alumina layer on the at least one surface of the aluminum-containing component.

Alumina layer formation on aluminum surface to protect aluminum parts

A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance

Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

Method and system for high temperature clean

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Fremont, CA, United States of America

Ren-Guan Duan