Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Rémy Gassiloud

Elisa Vianello

Gabriel Molas

Philippe Blaise

Faiz Dahmani

Stéphane Cadot

François Martin

Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MSwith M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.

Method for manufacturing a layer of textured aluminum nitride

A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.

Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal

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Saint-Laurent-du-Pont, France

Rémy Gassiloud