Kabushiki Kaisha Toshiba

Ebara Corporation

Other

Kabushiki Kaihsa Toshiba

Rempei Nakata

Nobuo Hayasaka

Hideshi Miyajima

Nobuhide Yamada

Katsuya Okumura

Naruhiko Kaji

Shinichi Ito

Haruo Okano

Manabu Tsujimura

Miyoko Shimada

Minoru Harada

Kei Hayasaki

Tatsuhiko Ema

Yukio Nishiyama

Ryoichi Shinjo

Yutaka Nakano

Kunihiro Miyazaki

Yasutaka Sasaki

Takashi Yoda

Haruki Nojo

Hiroyuki Yano

Hisashi Kaneko

Junichi Wada

Masahiko Hasunuma

Mie Matsuo

Masako Kodera

Riichirou Aoki

Hitoshi Ito

Hiroshi Ikegami

Keiji Fujita

Hideaki Masuda

Takahito Nagamatsu

Yoshimi Hisatsune

Motonobu Kawai

Akemi Satoh

Masao Toyosaki

Akihiro Kojima

Takahiro Kitano

Yusuke Kohyama

Hiroshi Kubota

Takashi Endo

Hideki Shibata

Eiji Hayashi

Tohru Watanabe

Noriaki Matsunaga

Kinji Yamada

Shinji Kobayashi

Yoshiaki Shimooka

Atsushi Shiota

Yoshikuni Tateyama

Hitoshi Itoh

Itsuko Sakai

Takeshi Nishioka

Takahiko Kurosawa

Kenro Nakamura

Hideto Matsuyama

Kiyotaka Kawashima

Hirotaka Ogihara

Masaki Hirano

Hiroshi Sato

Tsunekazu Yasutake

Taketo Matsuda

Mutsuhiko Yoshioka

Makoto Sugiura

Youngsoon Seo

Yuuichi Kuroda

In accordance with an embodiment, a substrate storage container includes first and second cases, a lid and a moving unit. The first case is provided with an opening to take in or out a substrate. The lid closes the opening. The second case can move in a first direction crossing a surface of the first case. The opening is provided on the surface. The moving unit moves the second case in the first direction in response to the opening of the lid.

Substrate storage container and substrate storage container mounting table

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N).

Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus

A manufacturing method for a semiconductor device includes generating on a substrate liquid-phase silanol having fluidity by causing a source gas made of a material containing silicon to react with a source gas made of a material containing oxygen, introducing the silanol into a first recess having an aspect ratio of a predetermined value wholly, and introducing the silanol into a space from a bottom to an intermediate portion in a second recess having an aspect ratio lower than the predetermined value, the first and second recesses are provided in the substrate, burying a silicon oxide film in the first recess and providing the silicon oxide film in the second recess by converting the silanol into the silicon oxide film by dehydrating condensation, and providing a dielectric film having film density higher than that of the silicon oxide film on the silicon oxide film.

Manufacturing method for semiconductor device

The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.

Method of manufacturing semiconductor device

A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.

Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N)

Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at least a portion of pores in the porous insulating film having on the inner wall thereof a layer of a second insulating material which differs in nature from the first insulating material, and a plug and/or a wiring layer buried in the porous insulating film.

Semiconductor device fabrication method

A method for manufacturing a semiconductor device of the present invention includes, forming a first silicon oxide film by HDP-CVD so as to bury a recess portion in a three-dimensional portion formed in a surface region of a semiconductor workpiece to a position lower than an upper surface of the recess portion, and forming a second silicon oxide film by SOG on the first silicon oxide film so as to fill the recess portion.

Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising forming a protective film on a surface of a lower-layer interconnection, and forming a multilayer-structured film by stacking a first porous film, a first non-porous film, a second porous film, and a second non-porous film on a surface of the protective film in this order, and forming a via hole and an interconnect trench. After a resist mask is removed, protective film exposed at a bottom of the via hole is removed. An upper-layer interconnection of dual damascene structure is formed by embedding an interconnect material in the via hole and the interconnect trench. The first non-porous film includes a first layer has a high etching selectivity ratio relative to the protective film, and a second layer has a high etching selectivity ratio relative to the resist mask and the second porous film.

Method of manufacturing semiconductor device and semiconductor device

A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.

Gas circulating-processing apparatus

There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C&mdash;H bonds and C&mdash;C bonds, and a total amount of C atoms forming the C&mdash;H bonds and C atoms forming the C&mdash;C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

Semiconductor device and method of manufacturing the same

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&times;10 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&times;10 (m&middot;sec/N).

Disclosed is a method for forming an insulating layer, including coating a substrate with an insulating film material to form a coated film, the insulating film material containing at least first and second polymers differing from each other in average molecular weight, and heating the coated film while irradiating the coated film with an electron beam.

Method of forming insulating film and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.

Growing community of inventors

Kamakura, Japan

Rempei Nakata