Infineon Technologies Austria Ag

Infineon Technologies Ag

Remigiusz Viktor Boguszewicz

Dirk Priefert

Wolfgang Frank

Matteo Albertini

Christian Schippel

Jinsheng Song

Felix Simon Winterer

A semiconductor device includes a substrate layer having a floating base region of a first conductivity type. A first well of a second conductivity type and the floating base region form a first pn junction. A first conductive structure is electrically connected to the first well. A barrier region of the second conductivity type and the floating base region form an auxiliary pn junction. A second conductive structure is electrically connected to the floating base region through a rectifying structure. A pull-down structure is configured to produce a voltage drop between the barrier region and the second conductive structure, when charge carriers cross the auxiliary pn junction.

Semiconductor device including substrate layer with floating base region and gate driver circuit

A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.

Gate driver device having a driver circuit for supplying a backgate drive signal

Gate driver device

A drive device adapted to drive a semiconductor power device, wherein the drive device comprises a drive circuit comprising a first terminal adapted for connection to a first terminal of the power device, a gate terminal adapted to provide a driving signal for a gate terminal of the power device, a sensor for detecting overvoltage conditions at the first terminal of the power device, and wherein the drive circuit is adapted to modify the driving signal when the sensor detects an indication of an overvoltage condition, and wherein the drive circuit including the sensor is integrated onto a single substrate.

Overvoltage protection

Devices and methods are provided where a feedback is provided from a control terminal of a first switch, and a second switch is controlled based on the feedback.

Controlling a pair of switches

A circuit comprises an input terminal configured to receive an input signal. A high-side driver is configured to provide a high-side control signal to a high-side power transistor via a high-side terminal based on the input signal. A low-side driver is configured to provide a low-side control signal to a low-side power transistor based on the input signal. An interface is configured to couple the high-side terminal and the low-side terminal via a capacitor.

Tailored switching of power transistors

A circuit for conveying information from a sender component to a receiver component is provided. The sender component is a high side component and the receiver component is a low side component or the sender component is a low side component and the receiver component is a high side component. The low side component is arranged to drive a first electronic switch of a half bridge and the high side component is arranged to drive a second electronic switch of the half bridge. The circuit includes a first voltage-decoupling device and a second voltage-decoupling device that are arranged such that a voltage conveyed from the sender component to the receiver component is modulated by the sender component and conveyed across the first voltage-decoupling device and the second voltage-decoupling device depending on the information.

Conveying information between high side and low side driver

A power supply circuit can be used to provide an alternating-current supply voltage to an electric motor. The power supply circuit is supplied by line power. The power supply circuit includes a inverter including at least one pair of transistor for generating a corresponding phase of the plurality of power supply phases. The inverter includes a transistor control circuit for switching the low-side transistor to its conducting state and the high-side transistor to its non-conducting state in case an excess voltage is detected at the input of the inverter.

Growing community of inventors

Essen, Germany

Remigiusz Viktor Boguszewicz