Sensor Electronic Technology, Inc.

Uvton, Inc.

Gaska Consulting, LLC

Seoul Viosys Co., Ltd.

Remigijus Gaska

Michael Shur

Alexander Dobrinsky

Maxim S Shatalov

Jinwei Yang

Rakesh B Jain

Timothy James Bettles

Grigory Simin

Yuri Bilenko

Saulius Smetona

Wenhong Sun

Mikhail Gaevski

Igor Agafonov

Alexander Lunev

Yuriy Bilenko

Xuhong Hu

Robert Mark Kennedy

Alexei Koudymov

Jianping Zhang

Qhalid Fareed

Daniel Billingsley

Ignas Gaska

Muhammad Asif Khan

Jianyu Deng

Victor Ryzhii

Arthur Peter Barber

Arturas Zukauskas

Brandon A Robinson

Pranciskus Vitta

Carlton Gibson

Igor Shturm

Devices include a semiconductor ultraviolet light source; a photocathode attached to the semiconductor ultraviolet light source; an anode; and a separation layer configured to create a vacuum gap between the anode and cathode. The semiconductor ultraviolet light source generates photoelectrons at a surface of the photocathode. The construct is configured together as a monolithic integrated element.

Electron beam devices with semiconductor ultraviolet light source

A device for cleaning a target may include a housing including a base and a lid; a chamber within the housing having a top within the lid, a bottom within the base, and at least one UV reflective plate; at least one UV emitter attached to the housing and positioned to emit UV radiation into the chamber; and a support attached to the housing and located in the chamber, the support configured for locating the target so that the UV radiation illuminates the target. All of the at least one UV emitters may be located in the base of the housing and none of the at least one UV emitters may be located in the lid of the housing. A means may be provided for rotating the support relative to the base so that the target moves relative to the at least one UV emitter. The means may include at least one of a fan, a motor, and actuator, and/or specially-configured support plates, and/or bases of housings.

UV disinfection device and method

A device for cleaning a target includes a housing including a base defining an inner circumference and a lid; a chamber within the housing having a top within the lid, a bottom within the base, and at least one UV reflective plate; at least one UV emitter attached to the housing and positioned to emit UV radiation into the chamber; and a support attached to the base and located in the chamber, the support configured for locating the target so that the UV radiation illuminates the target. The support may be formed of a plurality of ribs and/or a plurality of protrusions configured so that the target is supported thereon without falling onto the base. The at least one UV emitter may be upper and lower UV emitters, either or both of which may be one or more arrays.

UV device for disinfecting a target enclosed in a chamber

A device and method for cleaning a target may include supporting a target on a support in a chamber in a housing, the chamber optionally defined by at least one UV reflective plate; operating at least one UV emitter attached to the housing and positioned to emit UV radiation into the chamber so that the UV radiation illuminates the target; and operating an actuator to modify the UV radiation illumination of the target while the UV emitter is operated.

Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

Group III nitride heterostructure for optoelectronic device

A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Semiconductor layer including compositional inhomogeneities

A solution for cleaning and/or sterilizing one or more surfaces in a bathroom is provided. The sterilization can be performed using ultraviolet sources, which can emit ultraviolet radiation directed onto the surface(s). The cleaning can be performed using a fluid, such as water, that is flowed over the surface(s). The surface(s) can include at least a seat of a toilet and/or other surfaces associated with the toilet.

Ultraviolet-based bathroom surface sanitization

Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

Storage device including ultraviolet illumination

A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.

Ultraviolet water disinfection system

A diffusive illuminator is provided. The diffusive illuminator includes a set of light sources and a light guiding structure including a plurality of layers. At least some of the layers can be formed of a fluoropolymer and at least one layer can be formed of a transparent fluid. The light guiding structure also includes an emission surface through which diffused light exits. The light guiding structure can further include diffusive elements associated with at least one of the plurality of layers. Each diffusive element can diffuse the light to within forty percent of Lambertian distribution. The diffusive elements can be arranged based on a desired uniformity of the diffused light at a target distance corresponding to a surface to be illuminated. The diffusive illuminator can emit ultraviolet light, and can be implemented as part of a disinfection system.

Diffusive light illuminator

A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.

Patterned layer design for group III nitride layer growth

An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.

Simulation of missile signatures

A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolet radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.

Ultraviolet absorbent enclosure

A solution for irradiating a surface with ultraviolet radiation is provided. A movable optical element is utilized to form a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be irradiated. The movable optical element can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.

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Columbia, SC, United States of America

Remigijus Gaska