Toyoda Gosei Co., Ltd.

Remi Ohba

Takehiko Okabe

Daisuke Hiraiwa

Hironao Shinohara

Koji Kamei

Takashi Hodota

Munetaka Watanabe

A semiconductor light-emitting device () of the present invention includes: a substrate (); a laminated semiconductor layer () containing a light-emitting layer, which is formed on the substrate (); a first electrode () formed on the upper surface () of the laminated semiconductor layer (); and a second electrode () formed on an exposed surface () that is formed by partially cutting the laminated semiconductor layer (), wherein the first electrode () includes a transparent electrode () containing a hole portion () through which the upper surface () of the laminated semiconductor layer () is exposed, a junction layer () formed on a bottom surface () and an inner wall () of the hole portion (), and a bonding pad electrode () formed to cover the junction layer ().

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp

A semiconductor light-emitting element () is provided which includes a semiconductor layer (), an n-type electrode () which is provided on an exposed surface () of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (), a transparent conductive film which is provided on the semiconductor layer () and a p-type electrode () which is provided on the transparent conductive film; a light-reflecting layer () is provided between the semiconductor layer () and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode () in the planar view; the p-type electrode () comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode () exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L) which goes through a center () of the pad portion (P) and a center () of the semiconductor layer (); and the distance (D) between the center () of the n-type electrode () and the center () of the pad portion (P) is greater than or equal to the distance (D) between the center () of the pad portion (P) and the center () of the semiconductor layer ().

Semiconductor light-emitting element, lamp, electronic device and machine

A semiconductor light emission element () includes: a substrate (); multi-layered semiconductor layers () including a light emission layer () and layered on the substrate (); a transparent electrode () including an indium oxide and layered on the multi-layered semiconductor layers (); a first junction layer () including tantalum as a valve action metal and layered on the transparent electrode () in such a manner that a side of the first junction layer () being in contact with the transparent electrode () is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode () layered on the first junction layer () and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.

Semiconductor light emission element

A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode () formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode () includes a junction layer () and a bonding pad electrode () formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (), () and (), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions () and () of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

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Ichihara, Japan

Remi Ohba