Asml Netherlands B.v.

Remi Daniel Marie Edart

Hubertus Johannes Gertrudus Simons

Irina Lyulina

Richard Johannes Franciscus Van Haren

Michael Kubis

Xiuhong Wei

Franciscus Godefridus Casper Bijnen

Stefan Cornelis Theodorus Van Der Sanden

Marcus Adrianus Van De Kerkhof

Everhardus Cornelis Mos

Cheng-Qun Gui

Johannes Onvlee

Antoine Gaston Marie Kiers

Henricus Wilhelmus Maria Van Buel

Hoite Pieter Theodoor Tolsma

David Deckers

Ramon Navarro Y Koren

Rudy Jan Maria Pellens

Oleg Voznyi

Nicole Schoumans

Keith Frank Best

Pascale Anne Maury

Pui Leng Lam

Bernardus Johannes Antonius Hulshof

Roland Adrianus Emanuel Maria Bogers

A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system

A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods

A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Alignment mark deformation estimating method, substrate position predicting method, alignment system and lithographic apparatus

According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.

Lithographic apparatus and method

A method for aligning a substrate in a lithographic apparatus is presented. The substrate includes a plurality of alignment marks. The alignment marks have been defined by a second lithographic apparatus and are arranged to provide a substrate grid as a coordinate system that includes a first and a second direction, substantially perpendicular to the first direction. The method includes measuring a location and an orientation of the alignment marks to obtain alignment mark data; determining the substrate grid of the substrate from the alignment mark data by using a first substrate grid model with a first set of parameters; determining the substrate grid of the substrate from the alignment mark data by using a second substrate grid model with a second set of parameters, the second set of parameters including an ortho-scaling parameter in addition to the first set of parameters, and correcting machine-to-machine differences between the lithographic apparatus and the second lithographic apparatus with automated process control data based on the ortho-scaling parameter.

Method and system for automated process correction using model parameters, and lithographic apparatus using such method and system

An arrangement for and a method of automatically selecting substrate alignment marks on a substrate in a lithographic apparatus or overlay metrology targets in an overlay metrology apparatus. The apparatus has a processor and a memory connected to the processor. The memory stores locations of one or more sets of substrate alignment marks or overlay metrology targets available for selection and selection rules to select suitable substrate alignment marks or overlay metrology targets from this at least one set. The selection rules are based on experimental or theoretical knowledge about which substrate alignment mark or overlay metrology targets locations are optimal in dependence on one or more selection criteria.

Alignment system and method and device manufactured thereby

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Eindhoven, Netherlands

Remi Daniel Marie Edart