Applied Materials, Inc.

Rekha Ranganathan

Paul B Comita

David K Carlson

Norma B Riley

Doria W Fan

Dale R Dubois

Hali J L Forstner

Hali J Forstner

A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.

Point-of-use exhaust by-product reactor

The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.

Vented lower liner for heating exhaust gas from a single substrate reactor

Method for heating exhaust gas in a substrate reactor

A method of cleaning post deposition deposits from a processing chamber by providing a chlorine gas (Cl.sub.2), forming chlorine radicals and reacting the chlorine radicals with the deposits.

Method of cleaning CVD cold-wall chamber and exhaust lines

Growing community of inventors

Malden, MA, United States of America

Rekha Ranganathan