International Business Machines Corporation

Globalfoundries Inc.

Advanced Technology Materials, Inc.

Entegris, Inc.

Intermolecular, Inc.

Rekha Rajaram

Unoh Kwon

Balaji Kannan

Takashi Ando

Hemanth Jagannathan

Siddarth A Krishnan

Jeffrey A Barnes

Steven Lippy

Emanuel Israel Cooper

Li-Min Chen

Sheng-Hung Tu

Keith Kwong Hon Wong

Ruqiang Bao

Peng Zhang

Makonnen Payne

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Compositions and methods for selectively etching titanium nitride

A method of fabricating advanced multi-threshold field effect transistors using a replacement metal gate process. A first method includes thinning layers composed of multilayer film stacks and incorporating a portion of the remaining thinned film in some transistors. A second method includes patterning dopant materials for a high-k dielectric by using thinning layers composed of multilayer thin film stacks, or in other embodiments, by a single thinning layer.

Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration scheme

A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tinv (inverse of gate capacitance) mismatch.

Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme

Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme

Embodiments of the present invention provide CMOS structures and methods of gate formation that combine a keep-cap scheme in which a protective layer is maintained on a PFET during a replacement metal gate process that utilizes an NFET-first process flow. Selective nitridation is used to provide nitrogen to the NFET while the PFET is protected from nitrogen by the keep-cap. Additional dopants are provided to the NFET using a gate stack dopant material (GSDM) layer.

Method and structure for transistors using gate stack dopants with minimal nitrogen penetration

A method includes forming an n-FET device and a p-FET device on a substrate, each of the n-FET device and the p-FET device include a metal gate stack consisting of a titanium-aluminum carbide (TiAlC) layer above and in direct contact with a titanium nitride (TiN) cap, and removing, from the p-FET device, the TiAlC layer selective to the TiN cap. The removal of the TiAlC layer includes using a selective TiAlC to TiN wet etch chemistry solution with a substantially high TiAlC to TiN etch ratio such that the TiN cap remains in the p-FET device.

Metal stack for reduced gate resistance

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Aqueous cleaner for the removal of post-etch residues

A high productivity combinatorial system can be configured with sensors to automatically sense an identification tag of an installed reactor assembly, which comprises corresponding sensing elements. Configuration and usage data of the install reactor assembly can be retrieved from the identification tag, allowing the combinatorial system to properly access the reactor regions in the reactor assembly.

Facilities manifold with proximity sensor

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Scarsdale, NY, United States of America

Rekha Rajaram