Infineon Technologies Ag

Siemens Aktiengesellschaft

Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg

Reinhold Spanke

Thomas Nuebel

Oliver Schilling

Karl-Heinz Sommer

Gerhard Schulze

Reinhold Bayerer

Georg Borghoff

Guido Strotmann

Roman Lennart Tschirbs

Walter Springmann

Peter Zwanziger

Waleri Brekel

Torsten Groening

Gyoergy Papp

Martin Woelz

Ivonne Benzler

Dirk Froebus

Werner Koehler

Torsten Gröning

Thomas Nübel

A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the substrate, which together with the substrate encloses the one or more power semiconductor dies, a plurality of power terminals attached to the first main face of the substrate at a first end, and extending through the plastic housing at a second end to provide a point of external electrical connection for the one or more power semiconductor dies, a potting compound embedding the one or more power semiconductor dies, the first main face of the substrate and at least part of the first end of the plurality of power terminals, and an insulative coating applied only to parts of the plurality of power terminals disposed inside the plastic housing and in contact with just air. A corresponding method of manufacture also is provided.

Power semiconductor module with partially coated power terminals and method of manufacturing thereof

A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.

Semiconductor device

A semiconductor module having a current connection element designed for a high current carrying capability is disclosed. In one embodiment, the current connection element includes a plurality of metal layers which rest directly on one another.

Semiconductor module with current connection element

A method for reducing variations in the bending of rolled metal base plates for semiconductor modules is disclosed. In this method, the base plates are rolled in their longitudinal direction in a specific manner.

Method for reducing variations in the bending of rolled base plates and semiconductor module having such a base plate sensor

The power semiconductor module () has a heat-conducting base plate () on which at least three substrates () are placed, each substrate supporting at least one power semiconductor component () that gives off heat generated during operation. In order to optimize a power semiconductor module of this type with regard to mechanical load and heat dissipation, the substrates () are placed on the base plate () while being arranged in a single row (), and pressing devices (), which are situated close to the substrate, are provided on both longitudinal sides () of the base plate () while being arranged parallel to the row (). The base plate can be pressed against a cooling surface by the pressing devices.

Power semiconductor module having a thermally conductive base plate on which at least four substrates are arranged in at least one single row

A power semiconductor module comprises a housing. The housing comprises a casing and at least one coating of high resistance to surface tracking. A plurality of electrical conductors is provided on the housing. The coating is provided on a creepage distance that is provided between the electrical conductors.

Power module

A power module has several circuit units () that are electrically connected in parallel and are provided with terminal contacts (') which are electrically and mechanically interconnected via at least one current-conducting saddle (). In order to create a power module which is easy to produce and in which the current-conducting saddle () requires little space, the saddle () is embodied in several parts while encompassing a terminal element () that can be connected in a fixed manner to a terminal contact () of a circuit unit () independently of a connecting element () of the saddle (). The connecting element () of the saddle () extends on a plane that is spaced apart from the circuit unit () while being electrically connected to the terminal element ().

A bridge module includes at least two bridge branches. At least two respective controllable semiconductor switches are provided for each of the bridge branches. Electrically insulating and thermally conductive substrates have conductor tracks and are connected to a metal base plate. The semiconductor switches are electrically conductively mounted on the substrates. A housing has at least two AC terminals and four DC terminals. AC connection leads are connected to the AC terminals and to the semiconductor switches. DC connection leads are connected to the DC terminals and to the semiconductor switches. Each of the bridge branches has two of the DC connection leads and two of the DC terminals. All of the DC terminals of one and the same polarity are connectable to one another by leads being adjacent one another and disposed outside the housing.

Bridge module

A semiconductor module includes a metal base plate having a plane upper sace and a convex lower surface. An electrically insulating and thermally conductive substrate is material-lockingly connected to the upper surface of the metal base plate. Semiconductor chips are material-lockingly connected to an upper surface of the substrate.

Semiconductor module

A plurality of semiconductor arrangements arranged on interconnects are cected parallel to one another in a module. The arrangements lie opposite one another in pairs. At least one pair and at most two pairs of semiconductor arrangements are arranged to follow one another in the direction of an axis of the module and are further connected to lead conductors. Positions of the lead conductors with respect to the contacted semiconductor arrangements are the same for each pair of semiconductor arrangements or, respectively, two respective pairs of semiconductor arrangements. Corresponding lead conductors are connected to one another above the interconnects.

Growing community of inventors

Bestwig, Germany

Reinhold Spanke