Siemens Aktiengesellschaft

Siced Electronics Development Gmbh & Co Kg

Infineon Technologies Ag

Reinhold Schörner

Heinz Mitlehner

Peter Friedrichs

Dethard Peters

Rudolf Elpelt

Dietrich Stephani

Reinhard Maier

Gerd Griepentrog

Karl-Otto Dohnke

Karl Dohnke

An integrated vertical SiC&#x2014;PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC&#x2014;PN power diodes.

SiC-PN power diode

The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (), a current path that runs within the first semiconductor region () and a channel region (). The channel region () forms part of the first semiconductor region () and comprises a base doping. The current (I) in the channel region () can be influenced by means of at least one depletion zone (). The channel region () contains an n-conductive channel region () for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region () is produced by ionic implantation in an epitaxial layer () that surrounds the channel region ().

Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

A switching device includes a working circuit, to which an operating voltage can be or is applied to which has at least one electronic switching element. This switching element includes at least one control terminal for applying a switching signal and is switched off or switched on depending on the switching signal. At least one electronic protection element is for protecting the switching element in its switched state from excessive Joule losses in the event of danger, especially in the event of an overload or a short circuit. The protection element bears the predominant part of the operating voltage that is released at the working circuit. The switching device includes a switching-off device, which, in the event of danger, automatically switches the switching element to the switched off state, using the energy contained in the operating current or the operating voltage passing through the working circuit or the voltage that is released at the working circuit or at the protection element exceeds a predetermined upper limit value.

Electronic switching device

A switching device includes at least one MOSFET switching element and at least one JFET protective element, which is connected electrically in series to the switching element and which limits the electric current to a maximum current (saturated current) and control elements, which increase the maximum current of the JFET protective element during the closing operation or in a time-delayed manner, at least in the temporal mean, to at least a higher value and subsequently reduce said maximum current to at least a lower value. The advantage of said switching device is that it allows higher starting or closing overcurrents, which are subsequently limited.

Electronic switching device and an operating method thereof

A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.

Semiconductor structure with a switch element and an edge element

An SiC channel region of a semiconductor configuration, as a result of misoriented epitaxial growth on its surface, is formed with mutually parallel elevations. The flow of electric current in the channel region is set parallel with the elevations. As a result, a high degree of charge-carrier mobility in the channel region is obtained.

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Grossenseebach, Germany

Reinhold Schörner