Infineon Technologies Ag

Siemens Aktiengesellschaft

Siced Electronics Development Gmbh & Co Kg

Reinhold Schoerner

Larissa Wehrhahn-Kilian

Roland Rupp

Dethard Peters

Jens Peter Konrath

Rudolf Elpelt

Peter Friedrichs

Bernd Zippelius

Hans-Joachim Schulze

Anton Mauder

Wolfgang Bergner

A drift structure having a drift zone of a first conductivity type is formed in a SiC semiconductor body of a semiconductor component. Transistor cells each include a doping region and a source region in the SiC semiconductor body. The doping region forms a first pn junction with the drift structure and a second pn junction with the source region. The doping region is electrically connected to a first load electrode. A diode region is formed between the transistor cells and a side surface of the SiC semiconductor body. The diode region is electrically connected to the first load electrode and forms a third pn junction with the drift structure. An emitter efficiency of the diode region is higher than an emitter efficiency of the doping region.

Silicon carbide semiconductor component

A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.

Semiconductor device with junction termination zone

A semiconductor device includes a plurality of drift regions of a plurality of field effect transistor structures arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. The semiconductor device further includes a plurality of compensation regions arranged in the semiconductor substrate. The plurality of compensation regions has a second conductivity type. Each drift region of the plurality of drift regions is arranged adjacent to at least one compensation region of the plurality of compensation regions. The semiconductor device further includes a Schottky diode structure or metal-insulation-semiconductor gated diode structure arranged at the semiconductor substrate.

Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device

In termination regions of a silicon carbide substrate field zones are formed by ion implantation. By laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, a horizontal net dopant distribution in the field zones is set to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number. The field zones form first pn junctions with a drift layer.

Semiconductor device with termination structure including field zones and method of manufacturing

A method of manufacturing a semiconductor device includes introducing nitrogen into a metal layer or into a metal nitride layer, the metal layer or metal nitride layer being formed in contact with a semiconductor material. A semiconductor device includes a semiconductor material and a metal nitride layer in contact with the semiconductor material. The metal nitride has a nitrogen content larger than a solubility limit of nitrogen in the metal nitride.

Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device

The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.

Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material

A method for producing a MIS structure on silicon carbide is provided. Given application of a known CVD method for occupying the surface of a SiC substrate provided with a gate oxide with the silicon serving as gate material, stationary positive charges arise in the region of the oxide/SiC boundary surface whose extremely high effective density (Q.sub.tot &gt;10.sup.12 cm.sup.-2) disadvantageously influences the electrical properties of the finished component. The present method modifies the deposition conditions for the silicon serving as a gate material. Thus, the silicon is deposited from the vapor phase at a temperature of T&lt;580.degree. C. and is thus amorphously applied. During the subsequent doping (drive-in of phosphorous at T&gt;800.degree. C.), the amorphous silicon converts into the polycrystalline condition. Since the crystalline regions in the silicon layer can grow comparatively unimpeded and free of mechanical stresses, the effective density of the negative boundary surface charges arising in the gate oxide lies at values Q.sub.tot &lt;10.sup.11 cm.sup.-2. The method is particularly applied in the manufacture of MOSFETs, MOS capacitors and the like.

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Grossenseebach, Germany

Reinhold Schoerner