Siemens Solar Gmbh

Rct Solutions Gmbh

Siemens Aolar Gmbh

Reinhold Schlosser

Adolf Munzer

Steffen Keller

Adolf Muenzer

Andreas Teppe

Jan Schoene

In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700&#xb0; C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.

Solar cell having dielectric back reflective coating and method for the production thereof

For the simple production of a back surface field it is proposed that a boron-containing diffusion source layer (2) be applied to the rear (RS) of a silicon wafer (1) and boron be driven into the wafer to a depth of about 1 to 5 .mu.m at 900 to 1200.degree. C. This is done in an oxygen-containing atmosphere so that an oxide layer (4) is formed on open silicon surfaces, obviating the need to mask the regions not to be doped. After the removal of the oxide and source layer, phosphorus diffusion takes place and the back contact (3) is produced. It contains aluminum and, during the burn-in process, provides good ohmic contact.

Solar cell with a back-surface field

Solar cell with a back-surface field method of production

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Munich, Germany

Reinhold Schlosser