Siemens Aktiengesellschaft

Infineon Technologies Ag

Optun (bvi) Ltd.

Reinhard Marz

Volker Lehmann

Gerhard Winzer

Hartmut Schneider

Hans F Mahlein

Thomas Peter Haneder

Jochen Heinen

Alfred Martin

Ulrich Wolff

Ingo Baumann

Stephan Dertinger

Manfred Plihal

Heinrich Schlotterer

Michaela Fritz

Karin Fuchs

Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 &#x3bc;m distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

Device based on partially oxidized porous silicon and method for its production

The invention relates to a thermo-optical waveguide switch which is located on a substrate. Said switch comprises a glass layer, through which a waveguide extends. A hollow chamber which lies beneath the waveguide thermally decouples the latter from the substrate. At least two supports are located in the hollow chamber to provide mechanical stability. One production method for obtaining a thermo-optical waveguide switch consists of creating a glass layer with an arrangement of perforations on a substrate. At least one hollow chamber containing at least two supports is formed by isotropically underetching the glass layer. The hollow chamber is subsequently sealed and a waveguide is formed above said hollow chamber. Another production method first creates a waveguide in a glass layer which is formed on a substrate. The glass layer in the vicinity of the waveguide is then removed using a mask and the waveguide is at least partially underetched by an isotropic etching process, thus forming a hollow chamber containing at least two supports below the waveguide.

Thermo-optical waveguide switch

A monolithically integrated WDM demultiplex module has a film wave guide of InGaAsP fashioned on a substrate, a photodiode of InGaAs being applied to the film wave guide. The photodiode is optically coupled to the film wave guide by a leakage coupling. A wavelength selection element in the form of a grating is provided in the surface of the film wave guide. The module can be manufactured with a single epitaxial step. Structures for increasing the crosstalk attenuation of the module and for a better coupling-in of radiation into the module are provided.

Monolithically integrated WDM demultiplex module and method of

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Munich, Germany

Reinhard Marz