Intel Corporation

Infineon Technologies Ag

Siemens Aktiengesellschaft

Intel Mobile Communications Gmbh

Intel Deutschland Gmbh

Seimens Aktiengesellschaft

Google Inc.

Reinhard Mahnkopf

Andreas Augustin

Thorsten Meyer

Georg Seidemann

Gerald Ofner

Andreas Wolter

Bernd Waidhas

Christian Geissler

Sonja Koller

Sven Albers

Christian Mueller

Hans-Joachim Barth

Thomas Wagner

Wolfgang Molzer

Stephan Stoeckl

Edmund Goetz

Bernd Memmler

Laurent Millou

Stefan Kolb

Werner Weber

Bernhard Winkler

Christian Pacha

Helmut Wurzer

Harald Gossner

Martin Kerber

Michael P Skinner

Thomas Ort

Teodora Ossiander

Thomas Huttner

Andreas Vom Felde

Adrian Berthold

Michael Bianco

Volker Penka

Christian Müller

A semiconductor package includes a first semiconductor die, a semiconductor device comprising a second semiconductor die, and one or more wire bond structures. The wire bond structure includes a bond interface portion. The wire bond structure is arranged next to the first semiconductor die. The first semiconductor die and the bond interface portion of the wire bond structure are arranged at the same side of the semiconductor device. An interface contact structure of the semiconductor device is electrically connected to the wire bond structure.

Semiconductor packages, and methods for forming semiconductor packages

A recess in a die backside surface occupies a footprint that accommodates an inductor coil that is formed in metallization above an active surface of the die. Less semiconductive material is therefore close to the inductor coil. A ferromagnetic material is formed in the recess, or a ferromagnetic material is formed on a dielectric layer above the inductor coil. The recess may extend across a die that allows the die to be deflected at the recess.

Magnetic coils in locally thinned silicon bridges and methods of assembling same

Present disclosure relates to IC devices with thermal mitigation structures in the form of metal structures provided in a semiconductor material of a substrate on which active electronic devices are integrated (i.e., front-end metal structures). In one aspect, an IC device includes a substrate having a first face and a second face, where at least one active electronic device is integrated at the first face of the substrate. The IC device further includes at least one front-end metal structure that extends from the first face of the substrate into the substrate to a depth that is smaller than a distance between the first face and the second face. Providing front-end metal structures may enable improved cooling options because such structures may be placed in closer vicinity to the active electronic devices, compared to conventional thermal mitigation approaches.

Integrated circuit devices with front-end metal structures

A system-in-package apparatus includes a square wave lead frame that provides a recess for a first semiconductive device as well as a feature for a second device. The system-in-package apparatus includes a printed wiling board that is wrapped onto the lead frame after a manner to enclose the first semiconductive device into the recess.

Lead frame with angular deflections and wrapped printed wiring boards for system-in-package apparatus

A system-in-package apparatus includes a contoured heat sink that provides a first recess and a subsequent recess. The system-in-package apparatus includes a flexible printed wiring board that is wrapped onto the contoured heat sink after a manner to enclose the first semiconductive device into the first recess and a semiconductive device in the subsequent recess.

Contoured-on-heat-sink, wrapped printed wiring boards for system-in-package apparatus

A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the active surface to the recess-seated die at the recess. A processor die is disposed on the baseband processor die backside surface, and a memory die is disposed on the processor die. The several dice are coupled by through-silicon via groups.

Monolithic silicon bridge stack including a hybrid baseband die supporting processors and memory

A semiconductor device includes a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die. The semiconductor device includes an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die. The semiconductor device includes one or more trench structures extending through the handling layer of the semiconductor die. The one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.

Semiconductor devices, and a method for forming a semiconductor device

In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

Microelectromechanical system (MEMS) on application specific integrated circuit (ASIC)

A bent-bridge semiconductive apparatus includes a silicon bridge that is integral to a semiconductive device and the silicon bridge is deflected out of planarity. The silicon bridge may couple two semiconductive devices, all of which are from an integral processed die.

Bent-bridge semiconductive apparatus

Passive electrical devices are described with a polymer carrier. In one example, a conductive layer is formed over a polymer substrate in a pattern to form a passive electrical device and at least two terminals of the device. A plurality of external connection pads are connected to the terminals of the device.

Passive electrical devices with a polymer carrier

A chip arrangement may include: a mold compound; and a microelectromechanical systems device at least partially embedded in the mold compound.

Chip arrangement and method for manufacturing a chip arrangement

Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.

Methods of forming stacked microelectronic dice embedded in a microelectronic substrate

Growing community of inventors

Oberhaching, Germany

Reinhard Mahnkopf