Infineon Technologies Ag

Siemens Aktiengesellschaft

Reinhard Losehand

Hubert Werthmann

Carsten Ahrens

Hans Taddiken

Udo Gerlach

Wolfgang Hartung

Josef-Paul Schaffer

Ulf Bartl

Wolfgang Welsch

Stefan Paulus

Bernd Stadler

Christian Herzum

Werner Veith

Walter Zimmermann

Martin Petz

Raimund Peichl

Holger Heuermann

Martin Schroeder

Angelika Geiselbrechtinger

Guenther Kesel

Helmut Eger

A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal. The first switch comprises a first switching element with a first high-frequency switching transistor connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor connected between the first terminal and the fourth terminal. The second switch comprises a third switching element with a third high-frequency transistor connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor connected between the third terminal and the fourth terminal.

High-frequency switching transistor and high-frequency circuit

A switching transistor includes a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, having a first conductivity type and having a barrier region dopant concentration that is higher than the substrate dopant concentration. A source region is embedded in the barrier region, and has a second conductivity type and has a dopant concentration that is higher than the barrier region dopant concentration. A drain region is embedded in the barrier region and is offset from the source region. The draining region has the second conductivity type and a dopant concentration that is higher than the barrier region dopant concentration. A channel region extends between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region. An insulation region covers the channel region and is disposed between the channel region and a gate electrode. The barrier region dopant concentration and the substrate dopant concentration are chosen for generating a space-charge region around the source region and the drain region and for depleting the barrier region.

A high-frequency diode has a first semiconductor area with a first conductivity type as well as a barrier area adjacent to the first semiconductor area, which has a second conductivity type, which differs from the first conductivity type. Further, the high-frequency diode has a second semiconductor area adjacent to the barrier area, which has the second conductivity type and a dopant concentration which is lower than the dopant concentration of the barrier are or equal to zero. Further, the high-frequency diode has a third semiconductor area adjacent to the second semiconductor area, which has the same conductivity type and a higher dopant concentration than the barrier area. Through such a structure it is possible to provide a high-frequency diode with short switching times and low bias.

High-frequency diode

A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.

A circuit has an input terminal, an output terminal, a supply voltage terminal, a ground terminal and a useful circuit, wherein the useful circuit has a capacitive element with a first and a second capacitance terminal, wherein the capacitive element has a series connection of two series capacitors, which are connected to each other at an inner capacitance node, and an additional testing terminal coupled to the inner capacitance node, and designed such that at least one of the series capacitors is positioned between the additional testing terminal and the reference terminal comprising the input terminal, the output terminal, the supply voltage terminal and the ground terminal, related to current flow.

Circuit with a capacitive element with method for testing the same

A high-frequency switching device comprises a connecting region having a first conductivity type, and a first barrier region bordering on the connecting region and having a second conductivity type. A semiconductor region border on the first barrier region and has a dopant concentration which is lower than a dopant concentration of the first barrier region or equal to zero. A second barrier region borders on the first semiconductor region and has the first conductivity type. A base region borders on the second barrier region and has the second conductivity type. A third barrier region borders on the semiconductor region and has the second conductivity type and a higher dopant concentration than the semiconductor region. An emitter region borders on the third barrier region and has the first conductivity type. A fourth barrier region borders on the semiconductor region and has the second conductivity type and a higher dopant concentration than the semiconductor region. A collector region borders on the fourth barrier region and has the first conductivity type.

High-frequency switching device

A digital camera has a lens, a camera housing, and a semiconductor sensor. The camera housing is primarily formed of a transparent plastic block that encloses a semiconductor sensor only on its underside and has an adapted lens on its top side. Between the two there is provided an opaque layer with an aperture that improves the image quality. The invention also relates to a method for producing such a digital camera.

Digital camera with a transparent core disposed between a lens and a light-sensitive sensor

A high-frequency switching transistor comprises a collector area, which has a first conductivity type, a first barrier area bordering on the collector area, which has a second conductivity type which differs from the first conductivity type, and a semiconductor area bordering on the first barrier area, which has a dopant concentration which is lower than a dopant concentration of the first barrier area. Further, the high-frequency switching transistor has a second barrier area bordering on the semiconductor area, which has a first conductivity type, as well as a base area bordering on the second barrier area, which has a second conductivity type. Additionally, the high-frequency switching transistor comprises a third barrier area bordering on the semiconductor area, which has the second conductivity type and a higher dopant concentration than the semiconductor area. Further, the high-frequency switching transistor has an emitter area bordering on the third barrier area, which has the first conductivity type. Thereby it is possible to provide a high-frequency switching transistor, which has a lower bias voltage, a higher switchable power as well as a shorter switching time.

High-frequency switching transistor

A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.

Diode circuit and method of producing a diode circuit

A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

Capacitor and method for producing a capacitor

A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inhibiting an outdiffusion of a dopant from the well. At least a portion of the substrate is not covered by the buffer layer.

Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure

An integrated component for radiofrequency applications has a resonant circuit with tuning diodes and trimming diodes that are connected in parallel. A programmable conductor network generates a trimming voltage at a trimming input that enables the production of a specific relationship between a voltage present at a tuning input and the resonant frequency of the resonant circuit.

Integrated radiofrequency circuit component having a trimming diode controlled by a trimming voltage provided by a D/A converter

The magnetic component uses at least two different layers of magnetic material for carrying and amplifying the magnetic flux. The use of two different layers which may, however, have the same material composition allows the magnetic conductors to form a magnetic circuit with a locally matched domain alignment. The magnetic component accordingly allows considerable improvements to be achieved in the component parameter, in particular a considerable increase in the Q-factor.

Magnetic component

A conductor network includes trimming capacitors and is connected in parallel with a resonant circuit. The trimming capacitors can be connected in parallel with the variable-capacitance diodes in the resonant circuit through PIN diodes, enabling trimming of the resonant circuit.

Component having an integrated radiofrequency circuit

A method for producing Schottky diodes having a protective ring in an edge region of a Schottky contact. The protective ring is produced by a protective ring material that is deposited onto a surface of a semiconductor layer, which surface is provided with a patterned masking layer beforehand, and the protective ring material subsequently being siliconized. In this case, the protective ring material constitutes a metal, in particular a high barrier metal, which has, in particular, platinum.

Growing community of inventors

Munich, Germany

Reinhard Losehand