Koninklijke Philips Corporation N.v.

National Technology & Engineering Solutions of Sandia, LLC

Reinhard Brock

Douglas Chandler Trotter

Randolph R Kay

Armand Pruijmboom

Seethambal S Mani

Adam Jones

Andrew Lea Starbuck

David M Szmyd

Andrew Pomerene

A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.

Method of fabricating photosensitive devices with reduced process-temperature budget

A lateral bipolar transistor for an intergrated circuit is provided that maintains a high current gain and high frequency capability without sacrificing high Early voltage. More particularly, a lateral bipolar transistor is formed on an integrated circuit having both bipolar and CMOS devices, the lateral bipolar transistor being formed according to the BiCMOS method and without additional steps relative to formation of vertical bipolar devices if provided in the same area. Among other things, an integrated circuit is provided in which P well structures are provided in the collector regions of an LPNP that have been found to affect a significant increase in the product of the Early voltage and the current gain.

Lateral bipolar transistor and method of making same

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Albuquerque, NM, United States of America

Reinhard Brock