Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Sylvania Inc.

Ledvance Gmbh

Ams-osram International Gmbh

Osram Ag

Reiner Windisch

Ralph Wirth

Krister Bergenek

Frank Baumann

Stefan Lange

Andreas Dobner

Andreas Biebersdorf

Berthold Hahn

Volker Härle

Frank Jermann

Tim Fiedler

Walter Wegleiter

Julius Muschaweck

Klaus Streubel

Matthias Sperl

Rainer Butendeich

Joerg Sorg

Herbert Brunner

Georg Bogner

Barry Baxter Stout

Karl Engl

Matthias Peter

Stefan Groetsch

Martin Strassburg

Hans-Jürgen Lugauer

Franz Eberhard

Nitin Kumar

Arndt Jaeger

Ines Pietzonka

Stefan Gruber

Heribert Zull

Peter Heidborn

Florian Bösl

Norbert Boenisch

Peter Stauss

Thomas Zeiler

Hailing Cui

Robert Walter

Gertrud Kraeuter

Wilhelm Stein

Jörg Frischeisen

Magnus Ahlstedt

Christopher Wiesmann

Elmar Baur

Dennis Sprenger

Torsten Baade

Markus Kirsch

Sergey Kudaev

Florian Boesl

Christopher Koelper

Peter Stauβ

Günter Kirchberger

Günther Grönninger

Michael Schmal

Norbert Bönisch

Steffen Köhler

Guenter Kirchberger

Christian Gammer

Philipp Schlosser

Christian Jung

Meik Weckbecker

Simon Lankes

Thomas Klafta

Claus Diener

Klaus Ziemssen

Katrin Kondula

Stefan GRÖTSCH

In an embodiment a detector for spectroscopy includes a housing comprises at least one aperture configured for supplying a light beam reflected or emitted from a target, the housing having at least one cross-sectional plane in which the at least one aperture comprises first and second non-contiguous intersecting surfaces, a detector arrangement with a detector surface configured for wavelength- and angle-dependent detection of light, the detector arrangement being arranged in the housing laterally spaced from the at least one aperture, a first reflector element arranged in the housing and a second reflector element opposite the detector surface, wherein the first reflector element is arranged in a beam path of the at least one aperture and is configured to direct a light beam incident through the at least one aperture onto the second reflector element, and wherein the second reflector element is configured to direct an incident light beam onto the detector surface.

Detector for spectroscopy

In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

Vital sign sensor and method for manufacturing a vital sign sensor

A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein Furthermore, a method for producing devices is specified.

Device comprising leadframes, and method for producing a plurality of devices

An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.

LED filament comprising conversion layer

A light-emitting component has a light-emitting diode chip which emits blue light with a peak wavelength of at least 450 nm and at most 465 nm. A conversion element is arranged downstream of the light-emitting diode chip in an emission direction. The conversion element contains a green fluorescent substance and a red fluorescent substance. During operation of the component the green fluorescent substance converts a part of the blue light into green light and the red fluorescent substance converts a part of the blue light into red light. The combination of the light-emitting diode chip and the conversion element thereby emits a cold white mixed light, comprising at least a part of the blue light, the green light, and the red light, wherein the cold white mixed light has a melanopic action factor of at least 0.85.

Light-emitting component, light fixture, method for operating a light fixture, and conversion element

An optoelectronic semiconductor chip having a semiconductor body () that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face () is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet () that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer () that connects the conversion platelet () to the radiation exit face (), wherein the wavelength-converting joining layer () has luminescent material particles () that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer () furthermore has a thickness of no more than 30 micrometers. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element

A light module for providing polychromatic light is provided. The light module includes a wavelength conversion element, a first light source for emitting a first light beam in a first wavelength range, and at least one second light source for emitting a second light beam. The element is configured to convert primary light radiated in by the first light beam into a first conversion light and to convert primary light radiated in by the at least one second light beam into a second conversion light. At least the first conversion light and the second conversion light together form a third light beam. The module further includes a control unit configured for predefining a first luminous intensity for the first light source and/or a second luminous intensity for the at least one second light source depending on a measurement of the light color of the third light beam.

Light module, headlight/spotlight and method for providing polychromatic light

A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope mand a y-intercept nin a CIE standard chromaticity diagram, with the slope m=1.189 and the y-intercept n=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Semiconductor illuminating device

Various embodiments disclosed herein include a light-based communication system. The system includes a plurality of luminaires, in which each of the plurality of luminaires is configured to transmit light-based communication (LCom) signals, and a server communicatively coupled to the plurality of luminaires. The server is configured to assign an identifier to each of the plurality of luminaires, transmit the assigned identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the assigned identifier via LCom signals, rotate, in response to receiving a trigger signal, the assigned identifier for each of the plurality of luminaires, and transmit the rotated identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the rotated identifier via LCom signals.

Rotating identifications in light-based positioning systems

A conversion element for the wavelength conversion of electromagnetic radiation from a first wavelength range to electromagnetic radiation from a second wavelength range, which includes longer wavelengths than the first wavelength range, the conversion element includes: a matrix material, the optical refractive index of which is temperature-dependent, and at least two different types of luminophore particles wherein a multiplicity of luminophore particles of each of the types are distributed in the matrix material, luminophore particles of different types differ from one another in terms of average particle size and/or material, the conversion element, upon excitation by electromagnetic radiation from the first wavelength range emits mixed radiation including electromagnetic radiation from the first and the second wavelength range, and the correlated color temperature and/or the color locus of the mixed radiation remain(s) substantially the same when the matrix material is at a temperature of between 25&#xb0; C. and 150&#xb0; C.

Conversion element and a light-emitting diode including such a conversion element

Conversion LED emits primary radiation (peak wavelength 435 nm to 455 nm) and has a luminescent substance-containing layer positioned to intercept the primary radiation and convert it into secondary radiation. First and second luminescent substances are used. The first luminescent substance is a ABO:Ce garnet type emitting yellow green having cation A=75 to 100 mol. % Lu, remainder Y and a Ce content of 1.5 to 2.9 mol. %, where B=10 to 40 mol. % Ga, remainder Al. The second luminescent substance is of the MAlSiN:Eu calsine type which emits orange red, where M is Ca alone or at least 80% Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, wherein some of the Al up to 20%, can be replaced by B, and wherein N can be partially replaced by O, F, Cl, alone or in combination.

Conversion LED with high color rendition index

Conversion element and a light-emitting diode comprising such a conversion element

Various embodiments relate to a lighting device with an optoelectronic light source, an optical body downstream thereof for distributing the light, and a diffuser downstream of the latter, onto the light entry surface of which the light emitted by the optical body falls and the light exit surface of which represents a light emission surface of the lighting device. To homogenize the luminous intensity on the light exit surface, in addition to distributing the light with the optical body, the diffuser is not provided to be uniformly scattering to such an extent that light falling thereon in a central region is scattered more intensely than light falling thereon in an edge region.

Lighting device with optoelectronic light source

Various embodiments may relate to an LED module, including a number of first inherently unpackaged LED chips, which are in each case designed to emit light of a first color at a respective light emission area, and a number of second inherently unpackaged LED chips, which are in each case designed to emit light of a second color, different than the first color, at a respective light emission area. The LED chips are provided jointly in a housing, and the respective light emission area of a second LED chip is at least 25% smaller than the respective light emission area of a first LED chip. The sum of the light emission areas of the first LED chips is at least 50% greater than the sum of the light emission areas of the second LED chips.

LED module with LED chips

A light-emitting diode module for emitting white light includes a first light emitting diode chip for generating radiation in the blue spectral range having a first peak wavelength, a second light emitting diode chip for generating radiation in the blue spectral range having a second peak wavelength, a third light emitting diode chip for generating radiation in the red spectral range having a third peak wavelength, a first and a second phosphors disposed downstream of the first and the second light emitting diode chips, respectively. The first light emitting diode chip with the first phosphor generates a first mixed radiation and the second light emitting diode chip with the second phosphor generates a second mixed radiation. The first phosphor exhibits a first absorption maximum at a wavelength greater than the first peak wavelength. The second phosphor exhibits a second absorption maximum at a wavelength less than the second peak wavelength.

Light-emitting diode module

Growing community of inventors

Pettendorf, Germany

Reiner Windisch