Leybold Aktiengesellschaft

Leybold-heraeus Gmbh

Applied Materials Gmbh & Co Kg

Reiner Kukla

Jorg Kieser

Hans Aichert

Rainer Ludwig

Michael Lubbehusen

Siegfried BeiBwenger

Michael Geisler

Eggo Sichmann

Anton Dietrich

Stefan Hein

Rainer Gegenwart

Peter Skuk

Anton Pawlakowitsch

Wolf-Eckart Fritsche

Gerd Deppisch

Rolf Adam

Siegfried Beisswenger

Wolf-Eckhart Fritsche

Karl-Heinz Wenk

Wolf E Fritsche

Klaus Wilmes

A guide arrangement () for guiding webs in evacuatable web treatment installations comprises at least one guide roller () with an axis (), whose spatial position is settable. To solve the problem of compensating in modular installations with several chambers either misalignments of the chambers relative to one another and/or to avoid completely adjustable roller frames, whose adjustment would require the repositioning of treatment and coating sources and of separating gaps on the circumference of coating rollers, the invention proposes that the guide roller () is supported between two pivot bearings (), of which at least one is adjustable relative to the other transversely to the axis (). This is preferably carried out thereby that the adjustable pivot bearing () comprises a slide guide (), fastened to a chamber wall (), on which a slide () with the pivot bearing () is guided, and that the adjustable pivot bearing () comprises a remotely operated adjustment drive ().

Guide arrangement with at least on guide roller for the guidance of webs in webs treatment installations

A vacuum chamber contains means for transferring a substrate for an information disc such as a CD from a loading station to a coating station, where material such as aluminum in wire form is evaporated in order to coat the substrate from above. An evaporation nozzle is continuously supplied with wire at a rate according to the coating thickness. The nozzle may be heated either resistively in order to evaporate the wire therein, or the wire may be directly heated by an induction coil.

Apparatus for the evaporative coating of substrates

In a process for coating substrates by means of cathode sputtering, a magnetron cathode is used which has an annularly closed target 9. The sputter surface 9a of this target has an inner edge 9c and an outer edge 9d. The corresponding system of permanent magnets 7 has a first pole 7c which is disposed inside the inner edge and a second pole 7d disposed outside the outer edge. The characteristics of the poles geometrically resemble those of the target edges. This results in the generation of a circumferentially closed magnetic tunnel over the sputter surface. The flux lines thereof which are important to the enclosure of the plasma, are only slightly curved. In order to achieve a good material efficiency at high sputter rates and yet a high plasma density at the substrates, the spatial course of the magnetic flux lines is selectively distorted in such a way that the area of maximum target erosion, in absence of additional magnetic fields, is shifted to the vicinity of the outer edge 9d of the target 9. An averaged time value of an excitation current is applied to an additionally disposed magnetic coil 26. It serves to shift the zone of maximum target erosion approximately to the center between the two target edges. A periodic change of the average value of the excitation current shifts the zone of maximum target erosion from the center toward both sides.

Process for coating substrates by means of a magnetron cathode

Cathode base (1) has a hollow target (8) disposed thereon with at least one planar sputtering surface (8a), of circular shape for example, which is encompassed by at least two concentric, continuous projections (8b, 8c), and with a magnet system (6) with pole faces (6c, 6d) of opposite polarity lying on both sides of the target (8) for the production of magnetic lines of force (11, 11', . . . ) running substantially parallel to the sputtering surface (16a), the wall surfaces (8d, 8e) of the projections (8b, 8c) of the target (8), adjoining the sputtering surface (8a) being disposed at an angle (.alpha.) to the perpendicular, is preferably in a range between 30 and 70 degrees.

Sputtering cathode for coating substrates in cathode sputtering apparatus

In a process for coating substrates 1, 35, for example aluminum ceramic plates 1 or polyimide films 35 with copper by means of a device including a direct current source 10 which is connected to a sputtering cathode 5, 30, 31 disposed in a process chamber 15, 15a, 32 which can be evacuated and this cathode electrically interacts with a copper target 3, 33, 34 which can be sputtered and the sputtered particles are deposited on the substrate 1, 35 whereby the argon gas can be introduced into the process chamber 15, 15a, 32 which can be evacuated, an oxygen inlet 20, 39 is provided in addition to the argon inlet 21, 40, whereby the supply of oxygen can be controlled via a valve 19, 43 inserted in the feed line 23, 39 and the amount of oxygen can be metered such that during a first process phase a copper oxide layer which functions as a bonding agent forms on the substrate 1, 35 and after adjusting the argon atmosphere in the process chamber 15, 15a, 32 pure copper is deposited as an electrically conductive layer.

Process for coating a dielectric substrate with copper

In a process for coating substrates by means of cathode sputtering, a magnetron cathode is used which has an annularly closed target 9. The sputter surface 9a of this target has an inner edge 9c and an outer edge 9d. The corresponding permanent magnets 7 has a first pole 7c which is disposed inside the inner edge and a second pole 7d disposed outside the outer edge. The characteristics of the poles geometrically resemble those of the target edges. This results in the generation of a circumferentially closed magnetic tunnel over the sputter surface. The flux lines thereof which are important to the enclosure of the plasma, are only slightly curved. In order to achieve a good material efficiency at high sputter rates and yet a high plasma density at the substrates, the spatial course of the magnetic flux lines is selectively distorted in such a way that the area of maximum target erosion, in absence of additional magnetic fields, is shifted to the vicinity of the outer edge 9d of the target 9. An averaged time value of an excitation current is applied to an additionally disposed magnetic coil 26. It serves to shift the zone of maximum target erosion approximately to the center between the two target edges. A periodic change of the average value of the excitation current shifts the zone of maximum target erosion from the center toward both sides.

Apparatus for coating substrates by means of a magnetron cathode

Cathode sputtering apparatus having a hollow cathode on the magnetron principle with a cathode base (5) in which a hollow target (9) with a cylindrical sputtering surface (10) and a cylindrical outer surface is disposed. The cathode base (5) has a cooling passage (6). The target is externally surrounded by a magnet system (18) with magnet poles for the production of a rotationally symmetrical tunnel of magnetic lines of force closed on the circumference and over the sputtering surface. Outside of the space surrounded by the sputtering surface (10) there is disposed at least one anode (3, 4). A transport path for a substrate to be coated passes through the target (9) and the at least one anode. The cooling passage (6) is sealed off from the target (9) by a wall (7). Due to a narrow clearance, as soon as the target (9) reaches its operating temperature it comes in thermal contact with the wall (7). The [north] pole faces (N) of the magnet system (18) are on one side and the other [south] pole faces (S) lie on the other side of the end faces of the target (9) and radially on a radius which is equal to or greater than the radius of the sputtering surface (10). The magnet system (18) is held at a freely adjustable ('floating') potential in operation by insulating spaces (11, 19, 10).

Cathode sputtering apparatus on the magnetron principle with a hollow

A sputtering cathode for the coating of substrates. The cathode has a base, a target of nonmagnetic material, and a magnet system having exposed pole faces for the production of a tunnel of magnetic lines of force overarching the sputtering surface. The target is provided with at least two continuous projections lying one inside the other, which contain at least one sputtering surface between them, and have confronting wall surfaces. The pole faces are located on both sides of the projections and sputtering surface between them such that magnetic lines of force issue perpendicularly from the one wall surface and, after crossing the sputtering surface, re-enter perpendicularly the opposite wall surface. The magnet system has permanent magnets magnetized parallel to the projections, which are yoked together on the sides facing away from the projections by a soft-magnetic base, and are provided on the sides facing the projections with soft-magnetic pole shoes extending over at least a part of the height of the projections.

Sputtering cathode based on the magnetron principle

A magnetron cathode for sputtering ferromagnetic targets. The magnet system consists of magnet poles of opposite polarity lying one within the other disposed on a basic cathode body. Between the target and the pole shoes, which consist of target material, two circumferential air gaps in the direction of the depth of the system are formed. The surfaces of projection of the magnet poles and target do not overlap. For the purpose of making the target ablation uniform while simultaneously achieving high sputtering rates, the pole shoes are separated, in accordance with the invention, each by a distance S from the magnet poles. The magnet poles lie in an area which runs from a plane passing through the sputtering surface in the direction of the depth of the system. Between the pole shoes and the target, on the one hand, and the magnet poles on the other, there is disposed a thermally conductive metal body which is in communication with at least one coolant passage and consists of a nonferromagnetic material.

Magnetron cathode for sputtering ferromagnetic targets

A magnetron cathode for cathodic evaporation apparatus with a target holder (10) for releasably securing a plate-like target (9). The associated magnet arrangement (7) has pole faces (7c, 7d) for producing at least one circumferentially closed tunnel of magnetic field lines which overlaps the target. The magnet arrangement (7) is accommodated in a housing of non-ferromagnetic material which extends over the pole faces. To increase the utilization factor of the target material without the pole faces or housing parts participating in the atomization process,

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Hanau, Germany

Reiner Kukla