Infineon Technologies Ag

Infineon Technologies Bipolar Gmbh & Co. Kg

Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg

Other

Siemens Aktiengesellschaft

Reiner Barthelmess

Hans-Joachim Schulze

Uwe Kellner-Werdehausen

Franz-Josef Niedernostheide

Anton Mauder

Franz Josef Niedernostheide

Mario Schenk

Jens Przybilla

Peter Weidner

Dirk Pikorz

Sebastian Paul Sommer

Gerhard Schmidt

Markus Droldner

Michael Stelte

Frank Dieter Pfirsch

Helmut Strack

Thomas Basler

Elmar Falck

Jörg Dorn

Joerg Dorn

Josef Lutz

Heinrich Brunner

Alfred Porst

Josef Georg Bauer

Oskar Neuhoff

Heinrich Gerstenkoeper

Tobias Gamon

Johann Breu

Ralf Joerke

Harald Kuhn

Harald Nübel

Christof Drilling

Juergen Schiele

Jorg Dorn

Norbert Haueis

A method for producing an edge structure of a semiconductor component includes: providing a semiconductor body having at least two mutually spaced-apart main faces respectively having an edge, between which edges an edge face extends; and etching a predetermined edge contour by purposely applying a chemical etchant onto the edge face by an etchant jet with simultaneous rotation of the semiconductor body about a rotation axis. The etchant jet is guided with a predetermined jet cross section, while being directed tangentially with respect to the edge face, such that the etchant jet impinges on the edge face only with a part of the jet cross section. A corresponding device for producing an edge structure of a semiconductor component is also described.

Method and device for producing an edge structure of a semiconductor component

A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.

Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.

Short-circuit semiconductor component and method for operating it

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.

Short-circuit semiconductor component and method for operating same

A disk cell for pressure contacting a plurality of semiconductor components via a clamping device to generate a clamping force. The disk cell includes a housing comprising at least one metallic pressure plate, a first semiconductor component arranged in the housing, and a second semiconductor component arranged in the housing. The first and second semiconductor components are different. The at least one metallic pressure plate reaches across and clamps the first and second semiconductor components, is substantially perpendicular to the clamping force, and is arranged so that the clamping force acts on the at least one metallic pressure plate to provide a local region of influence to clamp the first and second semiconductor components. The first semiconductor component is arranged below the local region of influence of the clamping force. The second semiconductor component is at least partially arranged outside the local region of influence of the clamping force.

Disc-shaped thyristor for a plurality of plated-through semiconductor components

A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

Semiconductor component including a short-circuit structure

A semiconductor component includes At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.

Semiconductor component with optimized edge termination

A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method

A method for producing a semiconductor component has the following step: the front side () of the semiconductor body () is irradiated with high-energy particles using the terminal electrode () as a mask, in order to produce recombination centers (A,B) in the semiconductor body () for the recombination of the first and second conduction type of charge carriers.

Semiconductor component and method for producing the same

A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone

A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

Method of fabricating a diode

An integrated circuit and an arrangement including a semiconductor device and a connecting element and method for producing such an arrangement is disclosed. One embodiment provides a semiconductor element having a first contact face and a second contact face. The first contact face and the second contact face extend in a first lateral direction. An electrically conductive connecting element which has a third contact face electrically contacts the semiconductor element. The connecting element includes a trench system. A first trench of this trench system extends from the third contact face into the connecting element.

Arrangement including a semiconductor device and a connecting element

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor component comprising a semiconductor body (), in which a p-doped emitter (), an n-doped base (), a p-doped base () and an n-doped main emitter () are arranged successively in a vertical direction (v). The p-doped emitter () has a number of heavily p-doped zones () having a locally increased p-type doping.

A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

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Soest, Germany

Reiner Barthelmess