Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Nxp B.v.

Simbeyond Holding B.v.

Koninklijke Philips Electronics N.v.

Reinder Coehoorn

Derk Jan Adelerhof

Herbert Lifka

Menno Willem Jose Prins

Pieter Jan Van Der Zaag

Kars-Michiel Hubert Lenssen

Petra Elisabeth De Jongh

Jacques C Kools

Nynke Anne Martine Verhaegh

Cornelis Reinder Ronda

Herfried Karl Wieczorek

Albert Hendrik Jan Immink

Hans Willem Van Kesteren

Jacobus J Ruigrok

Paulus Albertus Van Hal

Carsten Giebeler

Matthias Simon

Joannes Baptist Adrianus Dionisius Van Zon

Gerjan F Van De Walle

Jeroen Cottaar

Helga Hummel

Stephen Rodney Cumpson

Jacobus J M Ruigrok

Margreet De Kok

Martinus A Gijs

Pascal J H Bloemen

Wiepke Folkerts

Joanna Maria Elisabeth Baken

Jacques C S Kools

Godert Willem Renswoud Leibbrandt

Falco Cornelius Marinus Jacobus Maria Van Delft

Feilong Liu

Dionysius J Duisters

Siebe Laurentius Maria Van Mensfoort

Peter Arnold Bobbert

Stephan Johann Zilker

Albert H J Immink

Nynke A M Verhaegh

Three-dimensional master equation modeling for disordered semiconductor devices is provided. Charge transport is modeled as incoherent hopping between localized molecular states, and recombination is modeled as a nearest-neighbor process where an electron at a first location and a hole at a second location can recombine at either the first location or the second location. Here the first and second locations are any pair of nearest neighbor locations. We have found that this nearest neighbor recombination model performs substantially better than the conventional local recombination model where an electron and a hole must be at the same location to recombine. The recombination rate is modeled as a product of a prefactor &#x3b3;, hopping rates and state occupancies. Importantly, we have found that sufficient simulation accuracy can be obtained by taking &#x3b3; to be given by an empirically derived analytic expression.

Three-dimensional master equation simulations of charge-carrier transport and recombination in organic semiconductor materials and devices

The invention relates to a method for producing a radiation detector used to detect ionizing radiation including a first inorganic-organic halide Perovskite material () as a direct converter material and/or as a scintillator material in a detector layer and to a radiation detector comprising a detector layer () produced by means of the steps of the method. In order to provide an approach for producing a thick layer (e.g. above 10 &#x3bc;&#x3b9;&#x3b7;) of Perovskite material suitable for a radiation detector, it is proposed to grow the material selectively on a seeding layer (), yielding in a thick polycrystalline layer. One suitable seeding layer () to grow lead Perovskite material is made of a bromide Perovskite material.

Method for producing a radiation detector and radiation detector

The invention relates to an apparatus () and a method for the processing of single molecules, particularly for the sensing or sequencing of single-stranded DNA. A bottom layer () and an electrically conductive top layer () with a first and a second slit (), respectively, are disposed on top of each other such that an aperture (A) is formed by the slits. The slits () are preferably perpendicular to each other. An electrical circuit () may be connected to the top layer (), allowing to sense single molecules that pass through the aperture (A).

Apparatus for the processing of single molecules

Light device comprising a substrate, at least one photo-organic layer, at least two electrode layers electrically separated by said at least one photo-organic layer, and at least one encapsulation layer, wherein said at least one photo-organic layer is positioned between said substrate and said at least one encapsulating layer, and wherein multiple openings are provided that extend through the light device to allow fluids and or heat to pass through, said openings being spaced apart from said at least one photo-organic layer.

Light device and method of manufacturing a light device

The semiconductor device has a security coating with embedded magnetic particles and magnetoresistive sensors. This renders possible a measurement of the impedance of security elements defined by magnetoresistive sensors and security coating. If initial values of the impedance are stored, actual values can be compared therewith to see if the device has not been electrically probed or modified. Such a comparison can be used to check the authenticity of the device.

Semiconductor device, carrier, card reader, methods of initializing and checking authenticity

The present invention relates to a magnetoresistive sensing device, a system and a method for determining a density of magnetic particles in a fluid. The magnetoresistive sensing device has a substrate () with a layer structure () for supporting a fluid (). The layer structure has a first surface area () in a first level and a second surface area () in another second level and a magnetoresistive element () for detecting the magnetic field of at least one magnetic particle () in the fluid, the magnetoresistive element being positioned near a transition () between the first and second surface area and facing at least one of the surface areas. A corresponding system and method is described as well.

Magnetoresistive sensing device, system and method for determining a density of magnetic particles in fluid

A record head for the thermally assisted magnetic recording on a storage medium. The head has an inductive section, which includes a magnetic circuit having a record flux guide ending in a record pole, and an optical section, which includes an optical guide ending in an optical outlet. The optical guide is arranged beside the magnetic circuit and is an optical layer transparent to a selected wavelength. The optical layer is interposed between two cladding layers, of which one is formed by the record flux guide of the magnetic circuit and the other is formed by a layer having an index of refraction smaller than the index of refraction of the optical layer. The record head makes it possible to minimize the time that elapse between the moment of maximal energy absorption in the medium and the moment of recording on the medium in a thermally assisted recording process.

Record head for thermally assisted magnetic recording

Method and device for magnetic detection of binding of biological molecules on a biochip in which a magnetoresistive sensor device measures an areal density of magnetic nanoparticles on a micro-array, the magnetic nanoparticles being directly or indirectly coupled to a target sample. The magnetoresistive sensor device includes a substrate having attached thereto binding sites able to selectively bind the target sample, and a magnetoresistive sensor for detecting the magnetic field of the nanoparticles coupled to the target sample. The magnetoresistive sensor includes a plurality of magnetoresistive sensing elements, the width and length dimensions of which are at least a factoror more, preferably a factoror more larger than the diameter of the nanoparticles.

Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array

A method of manufacturing a magnetic tunnel junction device, in which a stack () comprising two magnetic layers () and a barrier layer () extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer () remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.

Method of manufacturing a magnetic tunnel junction device

Arrangement for protecting a chip and checking its authenticity

A magnetoresistive device () having a lateral structure and provided with a non-magnetic spacer layer () of organic semiconductor material allows the presence of an additional electrode (). With this electrode (), a switch-function is integrated into the device (). Preferably, electrically conductive layers () are present for the protection of the ferromagnetic layers (). The magnetoresistive device () is suitable for integration into an array so as to act as an MRAM device.

Magnetoresistive device and electronic device

A scanning device for scanning data-carrying disks. The disks include a magnetisable layer to and from which data is written and read using a magnetic transducer, such as a Giant Magneto-Resistive (GMR) transducer. Positioning of the transducer over a data track is achieved by optical tracking using a land/groove structure, and positioning of the transducer with respect to the optical tracking system by means of a reference beam transmitted through the disk.

Magnetic scanning system

A sensor (MRE) or memory element (ME) having a free ( ) and a pinned (M ) magnetic layer separated by a separation layer ( ). The free layer comprises a sandwich structure comprising two magnetic layers ( ), coupled anti-ferromagneticallly by a thin non-magnetic layer ( ), the easy magnetization direction for the two magnetic layers being directed transversely to the longitudinal axis ( ) of the stripe.

Magnetoresistive sensor or memory elements with decreased magnetic switch field

A thin film magnetic field sensor with perpendicular axis sensitivity uses either a giant magnetoresistance material element or a spin tunnel junction element. The sensor element has ferromagnetic layers which have strongly different uniaxial anisotropies and/or a modified magnetization curve, achieved by antiferromagnetic exchange coupling with an auxiliary ferromagnetic layer. A strongly miniaturizable sensor has four spin tunnel junction elements connected to form a Wheatstone bridge. The magnetically sensitive element functions equally as well as a laminated flux concentrator, resulting in a low noise single domain configuration. The very simple design also allows easy definition of the fixed magnetization direction of a counter electrode. Very high output voltage combined with very low power is achieved.

Magnetic field sensor with perpendicular axis sensitivity, comprising a giant magnetoresistance material or a spin tunnel junction

Magnetic field sensor comprising a spin-tunnel junction

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Eindhoven, Netherlands

Reinder Coehoorn