Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Reiko Taniguchi

Masaru Odagiri

Masayuki Ono

Eiichi Satoh

Shogo Nasu

Toshiyuki Aoyama

Kenji Hasegawa

Satoshi Yotsuhashi

Takayuki Shimamura

Masahiro Deguchi

Yuji Zenitani

Masato Murayama

Yuka Yamada

Norihiko Kawabata

Yasuhiro Ueyama

Shinji Yoshino

Hiroshi Hashiba

Kazuya Ushirokawa

Kazuhiro Ohkawa

A gas-producing apparatus that produces hydrogen or oxygen, includes: an electrolysis cell that produces hydrogen and oxygen through electrolysis of water; and a gas-liquid separation device that is connected to the electrolysis cell and that receives the water and the hydrogen or the oxygen, wherein the gas-liquid separation device includes a first chamber and a second chamber, the first chamber and the second chamber are separated by a partition wall, and a lower part of the first chamber and a lower part of the second chamber communicate with one another.

Gas-producing apparatus and gas-producing method

Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlGaN layer (0&#x3c;x&#x2266;0.25), an AlGaN layer (0&#x2266;y&#x2266;x), and a GaN layer. The AlGaN layer is interposed between the AlGaN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlGaN layer. The value of y decreases from the interface with the AlGaN layer f toward the interface with the GaN layer. The AlGaN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.

Photoelectrode used for carbon dioxide reduction and method for reducing carbon dioxide using the photoelectrode

A method for reducing carbon dioxide with use of a device for reducing carbon dioxide includes steps of (a) preparing the device. The device includes a vessel, a cathode electrode and an anode electrode. An electrolytic solution is stored in the vessel, the cathode electrode contains a copper rubeanate metal organic framework, the copper rubeanate metal organic framework is in contact with the electrolytic solution, the anode electrode is in contact with the electrolytic solution, and the electrolytic solution contains carbon dioxide. The method further includes step of (b) applying a voltage difference between the cathode electrode and the anode electrode so as to reduce the carbon dioxide.

Method for reducing carbon dioxide

The method for reducing carbon dioxide of the present invention includes a step (a) and a step (b) as follows. A step (a) of preparing an electrochemical cell. The electrochemical cell comprises a working electrode (), a counter electrode () and a vessel (). The vessel () stores an electrolytic solution (). The working electrode () contains boron carbide. The electrolytic solution () contains carbon dioxide. The working electrode () and the counter electrode () are in contact with the electrolytic solution (). A step (b) of applying a negative voltage and a positive voltage to the working electrode and the counter electrode, respectively, to reduce the carbon dioxide.

The method for reducing carbon dioxide of the present disclosure includes a step (a) and a step (b) as follows. A step (a) of preparing an electrochemical cell. The electrochemical cell comprises a working electrode, a counter electrode and a vessel. The vessel stores an electrolytic solution. The working electrode contains at least one nitride selected from the group consisting of titanium nitride, zirconium nitride, hafnium nitride, tantalum nitride, molybdenum nitride and iron nitride. The electrolytic solution contains carbon dioxide. The working electrode and the counter electrode are in contact with the electrolytic solution. A step (b) of applying a negative voltage and a positive voltage to the working electrode and the counter electrode, respectively, to reduce the carbon dioxide.

A light emitting device () of the present invention includes: a back electrode () as a first electrode and a transparent electrode () as a second electrode facing each other, at least one of the back electrode and the transparent electrode having transparency to light; and luminescent particles () provided between the back electrode () and the transparent electrode () and connected electrically to the back electrode () and the transparent electrode (). The back electrode () as the first electrode has recesses in a surface thereof facing the transparent electrode ().

Light emitting device

A display device is provided with a pair of a first electrode and a second electrode, at least one electrode of the first and second electrodes being transparent or translucent and a phosphor layer provided as being sandwiched between the first electrode and the second electrode, and at least one buffer layer provided as being sandwiched between the first or second electrode and the phosphor layer, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions, and wherein the buffer layer is sandwiched between the first or second electrode and the phosphor layer so that the size of an electric potential barrier between the first or second electrode and the phosphor layer via the buffer layer is made smaller than the size of a Schottky barrier between the first or second electrode and the phosphor layer that are directly made contact with each other without the buffer layer therebetween.

Display device

A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe.

A light emitting device () of the present invention includes luminescent particles () and a pair of electrodes () for injecting an electric current into the luminescent particles (). An inorganic hole transport material () is disposed between the electrodes (). The luminescent particles () are dispersed in the inorganic hole transport material (). Conductive fine particles may be adhered to at least a part of the surfaces of the luminescent particles () for the purpose of achieving further high brightness and high efficiency.

Light emitting device having inorganic luminescent particles in inorganic hole transport material

This light-emitting device includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode and constituted by dispersing n-type semiconductor particles in a p-type semiconductor medium. A light-emitting device in another embodiment includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode wherein a p-type semiconductor is segregated among the n-type semiconductor particles.

Light-emitting device and display

A display is provided with: a substrate; a plurality of parallel scan wires extending over the substrate in a first direction; a plurality of parallel data wires extending parallel to a surface of the substrate in a second direction perpendicular to the first direction; at least one switching element per intersection between the scan wires and the data wires; pixel electrodes connected to the switching elements; at least one phosphor layer provided above the pixel electrodes; and common electrodes provided above the phosphor layer, and the phosphor layer has a polycrystalline structure made of a first semiconductor material and a second semiconductor material segregated between grain boundaries in the polycrystalline structure, which is different from the first semiconductor material.

Display apparatus

A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.

Light emitting element

A display device is provided with a pair of a first electrode and a second electrode at least one of which is transparent or translucent and a phosphor layer formed so as to be sandwiched between the first electrode and the second electrode, and the phosphor layer has a polycrystal structure made of a first semiconductor substance in which a second semiconductor substance different from the first semiconductor substance is segregated on a grain boundary of the polycrystal structure, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions.

Display device having a polycrystal phosphor layer sandwiched between the first and second electrodes

A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer.

Light emitting device and manufacturing method

This light emitting device includes a pair of electrodes at least one of which is transparent or translucent, and a phosphor layer that is sandwiched between the electrodes and has a polycrystalline structure made of a first semiconductor material, and in this structure, a second semiconductor material different from the first semiconductor material is segregated on a grain boundary of the polycrystalline structure. The first semiconductor material and the second semiconductor material preferably have semiconductor structures of conduction types that are different from each other. Moreover, the first semiconductor material preferably has an n-type semiconductor structure, and the second semiconductor material preferably has a p-type semiconductor structure. Furthermore, in the case where the first semiconductor material is a zinc-based material containing zinc, at least one of the paired electrodes is preferably made of a material containing zinc.

Growing community of inventors

Osaka, Japan

Reiko Taniguchi