Fujitsu Corporation

Reiko Soejima

Shinichi Kubota

Akito Kuramata

Kazuhiko Horino

Kay Domen

An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition represented as AlGaN, wherein the AlGaN buffer layer has a carrier density in the range between 3&#xd7;10&#x2013;1&#xd7;10cm, and the compositional parameter x is larger than 0 but smaller than 0.4 (0&#x3c;x&#x3c;0.4).

Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element

There are provided a semiconductor laser, a semiconductor light emitting device, and methods of manufacturing the same wherein a threshold current density in a short wavelength semiconductor laser using a nitride compound semiconductor can be reduced. An active layer is composed of a single gain layer having a thickness of more than 3 nm, and optical guiding layers are provided between the active layer and cladding layers respectively.

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Kawasaki, Japan

Reiko Soejima