Kabushiki Kaisha Toshiba

Chlorine Engineers Corp., Ltd.

Reiko Ohno

Terumi Matsuoka

The method of removing a film from a substrate (wafer) comprises a step of injecting ozone (13) into an acid aqueous solution (12) (e.g., a mixed liquid of dilute hydrogen fluoride aqueous solution and dilute hydrochloric acid); and a step of bringing bubbles (18) formed by the ozone injection step into contact with a film (17) (e.g., organic or metal contaminated film) adhering on to the substrate to remove the film (17) from the substrate (16). Therefore, the organic film or metal contaminated film adhering onto the substrate surface can be removed easily and effectively. Further, the film removing agent is bubbles formed when ozone (13) is injected into an acid aqueous solution. Each bubble is composed of an inside ozone bubble and an outside acid aqueous solution bubble. Therefore, when the bubbles are brought into contact with the film, an intermediate between ozone and the film is first formed, and then the formed intermediate can be removed from the substrate by the acid aqueous solution.

Growing community of inventors

Kitakami, Japan

Reiko Ohno