Kabushiki Kaisha Toshiba

Reiko Kondoh

Yuichi Ohsawa

Hitoshi Iwasaki

Susumu Hashimoto

Yuzo Kamiguchi

Masashi Sahashi

Atsuhito Sawabe

Junichi Akiyama

Hiroaki Yoda

Hiromi Fuke

Toshihiko Ohta

Kohichi Tateyama

Kazuhiro Saito

Tomomi Funayama

Yoshiaki Saito

Koichiro Inomata

Toshihiko Ohto

A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.

Differential detection magnetoresistance head with laminated structure

The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

Magnetoresistance effect element

The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field extends in a direction same as that of the signal magnetic field.

Thin film head

A magnetoresistive head includes a magnetoresistive effect element including a magnetoresistive film, which has a first ferromagnetic layer and a second ferromagnetic layer separated by a nonmagnetic layer. A magnetization direction of the first ferromagnetic layer is perpendicular to a magnetization direction of the second ferromagnetic layer when a signal magnetic field is zero. A pair of bias layers provide magnetic bias, and a top surface of each of the pair of bias layers faces a lower surface of each edge region of the magnetoresistive film. A pair of lead electrodes produce a current flow through the magnetoresistive film, and each of the pair of lead electrodes is disposed on or above the magnetoresistive film.

Magnetic head

The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field, extends in a direction same as that of the signal magnetic field.

Thin film magnetic head responsive to spin-dependent scattering

A magnetoresistance effect head comprises a magnetoresistance effect element portion including a magnetoresistance effect film having a magnetic field response portion, a magnetic field providing film for providing the magnetoresistance effect film with a bias magnetic field, and a conductor film for supplying a current to the magnetoresistance effect film, wherein the magnetoresistance effect element portion has a laminate structure portion being composed of at least the conductor film, the magnetic field providing film, and the magnetoresistance effect film layered in this order at other than the magnetic field response portion. The magnetoresistance effect head is obtained by patterning a laminate film composed of a conductor film and a magnetic field providing film corresponding to a lead shape, forming an MR film, and patterning the MR film corresponding to a lead shape and the shape of a magnetic field response portion. Alternatively, a magnetic field providing film and a conductor film are layered in the order in a passive region other than the magnetic field response portion, forming a laminate film such that the magnetic field providing film is exposed at surface of the edge portion on the magnetic field response portion side. The MR film is formed on almost only the magnetic field response portion so that the MR film overlaps with the exposed portion of the magnetic field providing film.

Magnetoresistance effect head with conductor film pair and magnetic

Differential detection magnetoresistance head

It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

Growing community of inventors

Yokohama, Japan

Reiko Kondoh