Kabushiki Kaisha Toshiba

Reiji Ono

Hideo Tamura

Tetsuro Komatsu

Hiroaki Oshio

Kuniaki Konno

Masahiko Hyugaji

A method for manufacturing a light emitting device includes: measuring at least one of each wavelength of the emitted light of the light emitting element, each optical output of the emitted light of the light emitting element, and each chromaticity of the mixed light emitted through the mixed resin in a manufacturing process of the light emitting device; and adjusting chromaticity for each light emitting device by performing a prescribed chromaticity adjustment with regard to the mixed resin, on basis of a result obtained in the measuring, so that the chromaticity of the mixed light falls within a preset prescribed range.

Light emitting device, and method and apparatus for manufacturing same

An illuminating device in which stray lights are prevented and light distribution design is easy by making it possible to receive lights emitted from an LED lamp with an external reflecting mirror as much as possible is provided. A reflecting mirror having a concave reflecting surface reflecting an incident light, a light emitting element, and a lens molding a light emitting element therein and having a lens surface opposed to a light emitting surface of the light emitting element, the lens surface being in a slope shape with its central portion being projected to the light emitting element are included, and the reflecting surface of the reflecting mirror and the light emitting surface of the light emitting element are disposed to be opposed to each other with the lens surface of the lens therebetween so that light emitted from the light emitting element is reflected at the lens surface to be emitted outside the lens to be incident on the reflecting surface of the reflecting mirror.

Light emitting device and illuminating device

A semiconductor light emitting device includes a mold resin having a cup shape portion on an upper surface of the mold resin. One or more holes penetrate through the cup shape portion to outside of the mold resin and/or one or more trenches extend from the cup-shaped portion to outside the mold resin. A first lead is provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a first direction, and a second lead provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a second direction which is opposite to the first direction. A light emitting element is mounted on the first lead in the cup shape portion, and a wire electrically connects the light emitting element and the second lead. A sealing resin is embedded in the one or more holes and the one or more trenches and is configured to seal the light emitting element and the wire.

Semiconductor light emitting device

A semiconductor light detecting device has a light absorbing layer; and a pn junction, carriers generated by the light absorbing layer absorbing the light in a light detecting region being detected as a photoelectric current through a depletion layer provided by applying a backward voltage to the pn junction, wherein the light detecting region in the light absorbing layer is all depleted in a slate where an operating voltage is applied.

Semiconductor light detecting device

A semiconductor light receiving device includes a semiconductor crystal substrate having a principle plane which almost coincides with a crystal face having a low order face orientation index, a light detecting portion, formed on a surface of the semiconductor crystal substrate or inside the semiconductor crystal substrate, for converting incident light into an electric signal, and a light incident region formed on the principle plane of the semiconductor crystal substrate, for guiding light into the light detecting portion. The surface of at least the optical incident region on the principle plane of the semiconductor crystal substrate is an uneven surface constituted by a large number of crystal faces each having a face orientation index having an order higher than that of the crystal face of the semiconductor crystal substrate. As a result, a surface inclined with respect to incident light is obtained without inclining the semiconductor light receiving device itself with respect to the incident light, and the light receiving device can easily be mounted on an optical semiconductor device, so that a decrease in S/N ratio of an output signal and degradation of minimum light receiving output characteristics can be prevented.

Semiconductor light receiving device and method of manufacturing the same

An n.sup.- -type InP buffer layer is formed on an n-type InP substrate. An n.sup.- -type InGaAs light absorbing layer is formed on the n.sup.- -type InP buffer layer. An n.sup.- -type InP cap layer is formed on the n.sup.- -type InGaAs light absorbing layer. A p-type InP region is formed in the InP cap layer. A layered electrode having a contact with the p-type InP region comprises a first layer made of an Au layer, a second layer made of a Ti layer or the like, a third layer made of a Pt layer or the like, and a fourth layer made of an Au layer. The first layer made of Au has a thickness of 1 to 500 nm. This structure improves an ohmic ability and a peel strength at a contact portion where an electrode is connected, and simplifies manufacturing steps.

Semiconductor device having layered electrode

The upper surface of a stage has first, second and third surfaces formed in a stepped configuration, the first and second surfaces are connected to each other by a first side surface and the second and third surfaces are connected to each other by a second side surface. A circular arc-form concave portion is formed in the side surface and a chip carrier is disposed on the second surface inside the concave portion. A depressing plate is disposed on the second surface so as to freely slide in a direction perpendicular to the first side surface. The depressing plate is fixed on a clamp member which is connected to a rotor rotatably mounted on the stage. The rotor is biased by means of a spring so as to move the depressing plate towards the concave portion. The depressing plate has a depressing portion which is set in parallel with the first side surface and the position of the chip carrier is determined by the depressing portion of the depressing plate and the internal surface of the concave portion.

Growing community of inventors

Kanagawa-ken, Japan

Reiji Ono