Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Tokyo Electron Kabushiki Kaisha

Tokyo Electron Sagami Limited

Tokyo Electron Tohoku Kabushiki Kaisha

Reiji Niino

Tatsuya Yamaguchi

Hiroyuki Hashimoto

Makoto Fujikawa

Syuji Nozawa

Kazuhide Hasebe

Mitsuaki Iwashita

Shigeru Nakajima

Pao-Hwa Chou

Yuuichi Mikata

Shinji Miyazaki

Takahiko Moriya

Yoshiyuki Fujita

Katsuya Okumura

Hiroshi Okuno

Koichi Yatsuda

Toshiharu Nishimura

Takashi Hayakawa

Hideki Lee

Yasuo Imamura

Hitoshi Kato

Ken Nakao

Yoshihiro Hirota

Makoto Kobayashi

Hirofumi Kitayama

Yoji Iizuka

Yuichi Mikata

Yasushi Akasaka

Naoya Kaneda

Tsutomu Haraoka

Akimichi Yonekura

Yutaka Simada

Hiroshi Kumada

Hiroaki Ikegawa

Tomoyuki Ohbu

Rong Yang

Tomonari Yamamoto

Motohiko Nishimura

Hiroki Fukusima

Isao Siratani

There is provided a film-forming apparatus, comprising: a process container in which a vacuum atmosphere is formed; a rotary table installed in the process container, the rotary table having substrate mounting regions formed on a side of a top surface of the rotary table and configured to mount a plurality of substrates, and the rotary table including a rotary mechanism configured to rotate the substrate mounting regions around a rotary shaft; a heating mechanism configured to heat the substrates mounted on the substrate mounting regions; a gas supply part installed to face a moving region where the substrates move when the rotary table rotates and including gas discharge holes formed to cross the moving region, the gas discharge holes being configured to discharge a first film-forming gas and a second film-forming gas; and an exhaust part configured to exhaust an interior of the process container.

Film-forming apparatus and film-forming method

There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus

A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.

Film forming apparatus, film forming method, and storage medium

There is provided a method of manufacturing a semiconductor device by performing a process on a substrate, comprising: forming a sacrificial film made of a polymer having a urea bond on a surface of the substrate by supplying a precursor for polymerization onto the surface of the substrate; subsequently, performing a step of changing a sectional shape of the sacrificial film and a step of adjusting a film thickness of the sacrificial film by heating the sacrificial film; subsequently, performing the process on the surface of the substrate; and subsequently, removing the sacrificial film.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.

There is provided a method of manufacturing a semiconductor device by processing a substrate, which includes: embedding a polymer having a urea bond in a recess formed in the substrate by supplying a material for polymerization from above a sacrificial film to the substrate and forming a polymer film made of the polymer having the urea bond, wherein a surface of the substrate is covered with the sacrificial film, the recess including an opening of the sacrificial film that is formed by a patterning; removing the polymer film formed on the sacrificial film while leaving the polymer embedded in the recess; removing the sacrificial film in a state in which the polymer is embedded in the recess; and subsequently, removing the polymer embedded in the recess.

A method for manufacturing a semiconductor device by processing a substrate, the method includes forming a first film of a polymer having urea bonds by supplying a polymerization raw material to a surface of the substrate, subsequently, forming a pattern by etching the first film, and subsequently, forming a second film of a material different from the polymer of the first film by performing a substitution processing to the first film by supplying a reaction gas, which reacts with the polymerization raw material to generate a product, to the substrate while heating the substrate to depolymerize the polymer.

Method of manufacturing semiconductor device and vacuum processing apparatus

There is provided a semiconductor device manufacturing method including: forming a first mask film composed of a polymer having a urea bond by supplying a raw material to a surface of the substrate for polymerization; forming a second mask inorganic film to be laminated on the first mask film; forming a pattern on the first mask film and the second mask inorganic film and performing an ion implantation on the surface of the substrate; removing the second mask inorganic film after the ion implantation; and removing the first mask film by heating the substrate after the ion implantation and depolymerizing the polymer.

Semiconductor device manufacturing method, substrate processing apparatus and vacuum processing apparatus

According to an embodiment of the present disclosure, a method of forming a polyimide film on a substrate is disclosed. Such method can be easily controlled and form a polyimide film applicable as an insulation film. While a wafer is heated at a temperature at which a polyimide film is formed, a cycle, in which the wafer is sequentially supplied with a first processing gas, for example, containing a PMDA-based first monomer, and a second processing gas containing a non-aromatic monomer, for example, an HMDA-based second monomer, is performed for a predetermined number of times. When the processing gases are switched, a replacement gas is supplied into a reaction tube so that the monomers are not mixed together under the atmosphere in the reaction tube.

Film forming method

A method of forming a polyimide film on a surface of a substrate by dehydration condensation of a first monomer including a bifunctional acid anhydride and a second monomer including a bifunctional amine is disclosed. The method includes loading the substrate into a processing chamber, heating the substrate at a temperature at which a polyimide film is formed, and performing a cycle a predetermined number of times. The cycle comprises supplying a first processing gas containing the first monomer to the substrate, supplying a second processing gas containing the second monomer to the substrate. The method further includes supplying a replacement gas in the processing chamber between supplying the first processing gas and supplying the second processing gas thereby replacing atmosphere in the processing chamber by the replacement gas, and evacuating the first and/or the second processing gas out of the processing chamber.

There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.

Micro pattern forming method

Disclosed is a patterning method including: forming a first film on a substrate; forming a multi-layered film including a resist film on the first film; forming a patterned resist film having a preset pattern by patterning the resist film by photolithography; forming a silicon oxide film different from the first film on the patterned resist film and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; etching the silicon oxide film to thereby form a sidewall spacer on a sidewall of the patterned resist film; removing the patterned resist film; and processing the first film by using the sidewall spacer as a mask.

Patterning method

Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.

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Nirasaki, Japan

Reiji Niino