Kabushiki Kaisha Toshiba

Canon Medical Systems Corporation

Toshiba Matsushita Display Technology Co., Ltd.

Japan Display Central Inc.

Rei Hasegawa

Hajime Yamaguchi

Isao Takasu

Go Kawata

Tatsuo Saishu

Kohki Takatoh

Rieko Fukushima

Atsushi Wada

Yukio Kizaki

Yuko Nomura

Yuko Kizu

Takashi Miyazaki

Mitsuyoshi Kobayashi

Kohei Nakayama

Satomi Taguchi

Fumihiko Aiga

Hitoshi Nagato

Hiroyuki Nagata

Goh Itoh

Yutaka Nakai

Yukitami Mizuno

Shunsuke Kimura

Yasuharu Hosono

Kazuyuki Sunohara

Hyangmi Jung

Kenji Nakao

Haruhiko Okumura

Tetsuo Fukami

Tetsuya Kojima

Yujiro Hara

Isao Amemiya

Hirofumi Wakemoto

Masaki Atsuta

Hitoshi Yagi

Miki Mori

Kazunori Miyazaki

Hideyuki Funaki

Takeshi Yamamoto

Kazuki Taira

Shintaro Enomoto

Akira Kinno

Keita Sasaki

Haruhi Oooka

Hisao Fujiwara

Yasushi Mori

Sara Yoshio

Masao Tanaka

Yasuhiro Yamamoto

Masumi Okamoto

Rieko Iida

Takeshi Yamaguchi

Katsuyuki Naito

Masahiro Baba

Tomio Ono

Akira Tanaka

Yasushi Kawata

Hiroshi Ota

Kazushige Yamamoto

Toshiyuki Ono

Masahiko Akiyama

Nobuyoshi Saito

Naoko Kihara

Tsuyoshi Hioki

Hitoshi Kobayashi

Hiroki Iwanaga

Shintaro Nakano

Kentaro Miura

Keiji Sugi

Mitsuru Ishibashi

Shuichi Uchikoga

Kouji Suzuki

Naoto Kume

Tatsuo Nomaki

Shinichi Sanada

Hideyuki Sasaki

Keiko Fujii

Kimito Sakai

Hitoshi Kobayahi

According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

Radiation detector

According to an embodiment, a photoelectric conversion element includes a photoelectric conversion layer that converts light to charges. The photoelectric conversion layer contains oligothiophene and fullerene selected from a group including a fullerene and derivatives thereof. A content ratio of the oligothiophene and the fullerene is 500:1 to 5:1 by weight.

Photoelectric conversion element and photodetector

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

Photoelectric conversion element and radiation detector

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

Detection element and detector

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

Detection device and detector

According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 &#x3bc;m or more.

Radiation detector and method for manufacturing the same

According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.

Producing method of radiation detection element and radiation detection element

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.

A detection apparatus according to an embodiment includes first detectors, a first electrode, second detectors and a second electrode. The first detectors detect a photon. The first electrode is electrically connected to each of the first detectors. The second detectors detect a photon. The second electrode is electrically connected to each of the second detectors. The number of first detectors is less than the number of second detectors.

Detection apparatus and detection method

According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

Photodetection element and photodetector

According to one embodiment, a radiation detector includes a metal member, a capacitor, and a first charge-sensitive amplifier. The metal member includes a first portion and a second portion. The capacitor is electrically connected to the second portion. The first charge-sensitive amplifier is electrically connected to the first portion. The first charge-sensitive amplifier outputs a signal corresponding to &#x3b1;-rays incident on the metal member.

According to an embodiment, a radiation detector includes a first scintillator, a second scintillator, and a photoelectric conversion element. The first scintillator converts radiation into light. The second scintillator converts radiation into light and has higher density than the first scintillator. The photoelectric conversion element is provided between the first scintillator and the second scintillator, and includes a photoelectric conversion layer converting light into electric charge.

Radiation detector and radiation detector assembly

According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.

Photodetector and detection device

According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.

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Yokohama, Japan

Rei Hasegawa