Skyworks Solutions, Inc.

Panasonic Corporation

Skyworks Filter Solutions Japan Co., Ltd.

Skyworks Global Pte. Ltd.

Skyworks Panasonic Filter Solutions Japan Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Aicello Corporation

Rei Goto

Keiichi Maki

Hiroyuki Nakamura

Hironori Fukuhara

Gong Bin Tang

Tetsuya Tsurunari

Joji Fujiwara

Benjamin Paul Abbott

Yumi Torazawa

Hidekazu Nakanishi

Yuya Hiramatsu

Joshua James Caron

Yosuke Hamaoka

Toru Yamaji

Yiliu Wang

Siarhei Dmitrievich Barsukou

Koji Seo

Michael David Hill

Kwang Jae Shin

Tomoya Komatsu

Chun Sing Lam

Jie Zou

Takanori Yasuda

Takashi Hayashi

Hironori Sano

Takashi Inoue

Li Fu Chen

David Scott Whitefield

Takahiro Sato

Toru Jibu

Takeshi Furusawa

Shoji Okamoto

Hidehito Shimizu

Motoyuki Tajima

Zhiqiang Bi

Atsushi Tanikawa

An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.

Acoustic wave device with multi-layer substrate including ceramic

A multiplexer is disclosed. The multiplexer can include a multilayer piezoelectric substrate surface acoustic wave device that includes at least a portion of a transmission filter. The multiplexer can include a temperature compensated surface acoustic wave device that includes at least a portion of a reception filter. The reception filter is electrically connected to the transmission filter.

Multiplexer formed on multi-layer piezoelectric substrate and temperature compensated surface acoustic wave device dies

An acoustic wave device is disclosed. The acoustic wave device can include a substrate, an interdigital transducer electrode disposed on the substrate, and a temperature compensation layer over the interdigital transducer electrode. The IDT electrode includes a lower layer, an upper layer, and a buffer layer disposed between the lower layer and the upper layer. A modulus of elasticity of the buffer layer is less than a modulus of elasticity of the upper layer. The buffer layer is configured to release stress between the lower layer and the upper layer caused due to a difference between a coefficient of thermal expansion of the lower layer and a coefficient of thermal expansion of the upper layer.

Acoustic wave device with interdigital transducer electrode having buffer layer

A packaged surface acoustic wave device is disclosed. the packaged surface acoustic wave device can include a support substrate that includes a conductive via formed therein, a piezoelectric layer over the support substrate, an interdigital transducer electrode over the piezoelectric layer, a roof structure over the interdigital transducer electrode, and a conductive pillar between the support substrate and the roof structure. The conductive pillar supports the roof structure and defines at least a portion of an electrical pathway between the interdigital transducer electrode and the conductive via. The roof structure is configured such that there is no signal communication between the conductive pillar and the roof structure.

Packaged surface acoustic wave device with conductive pillar

An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

Acoustic wave device with tilted multilayer interdigital transducer electrode

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

Multilayer piezoelectric substrate device with partially recessed passivation layer

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of more dense material disposed of a layer of less dense material.

Acoustic wave device with multi-layer interdigital transducer electrode having layer of more dense material over layer of less dense material

An acoustic wave device has a multilayer piezoelectric substrate (MPS) structure and a multilayer interdigital transducer electrode (IDT). The multilayer piezoelectric substrate includes a piezoelectric layer over a support substrate. An additional (functional) layer can optionally be interposed between the piezoelectric layer and the support substrate, which can facilitate bonding between these layers and provide temperature compensation. The multilayer IDT is disposed over the piezoelectric layer and includes a first layer of a first material with higher density and a second layer of a different material with lower density. The interdigital transducer electrode also includes (mass loading) strips disposed over (e.g., adjacent, in contact with) the second layer, which advantageously facilitate suppression of transverse mode.

Acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression

A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a first solid acoustic mirror, a second solid acoustic mirror, a piezoelectric layer that is positioned between the first solid acoustic mirror and the second solid acoustic mirror, an interdigital transducer electrode on the piezoelectric layer, and a support substrate arranged to dissipate heat associated with the bulk acoustic wave. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the bulk acoustic wave. The first solid acoustic mirror is positioned on the support substrate.

Laterally excited bulk wave device with acoustic mirrors

A packaged surface acoustic wave device is disclosed. the packaged surface acoustic wave device can include a support substrate that includes a conductive via formed therein, a piezoelectric layer over the support substrate, an interdigital transducer electrode over the piezoelectric layer, a roof structure over the interdigital transducer electrode, and a conductive pillar directly over the conductive via. The conductive pillar supports the roof structure and defines at least a portion of a signal pathway between the interdigital transducer electrode and the conductive via.

Packaged multilayer piezoelectric surface acoustic wave device with conductive pillar

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a ceramic substrate, a piezoelectric layer over the ceramic substrate, and an interdigital transducer electrode over the piezoelectric layer. The ceramic substrate can be a polycrystalline spinel substrate. The surface acoustic wave device can also include a temperature compensating layer over the interdigital transducer electrode.

Acoustic wave device with ceramic substrate

A temperature compensated surface acoustic wave device is disclosed. The temperature compensated surface acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a buffer layer between the first layer and the second layer. A thermal conductivity of the second layer is greater than a thermal conductivity of the buffer layer. The buffer layer can be a titanium layer. A thickness of the buffer layer can be in a range of 20 nm to 200 nm, or in a range of 5% to 30% of a thickness of the interdigital transducer electrode.

Temperature compensated acoustic wave device with multilayer interdigital transducer electrode including buffer layer

An acoustic wave device has a substrate, an optional functional layer disposed over at least a portion of the substrate, a piezoelectric layer disposed over at least a portion of the functional layer and/or substrate, and an interdigital transducer electrode disposed on the piezoelectric layer. The piezoelectric layer has an outer edge spaced inward of an outer edge of the substrate, the outer edge of the piezoelectric layer being tapered at an angle relative to a surface of the substrate to thereby reduce an acoustic reflection magnitude at said outer edge of the piezoelectric layer.

Acoustic wave devices with multi-layer piezoelectric substrate

An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can include a filter circuit formed on the first portion of the piezoelectric layer. The acoustic wave device can include a cancelation circuit on the second portion of the piezoelectric layer.

Acoustic wave device with acoustic obstruction structure

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Osaka, Japan

Rei Goto