Motorola Corporation

Other

Reginald K Asher

James Price Letterman, Jr

Lee E Folk

Mohan Lal Sanduja

Virgil E Schuster

Beng L Lim

Bhagubhai D Patel

Felicia B Dragnea

Duane C Endicott

Reginald K Asher, Ii

An electrical insulation for a heatsink (14) of a semiconductor device (10) is provided by an insulating layer (16) formed on a desired portion or portions of the semiconductor device (10) to protect a semiconductor die (17) from arcing currents due to high voltage potentials. The insulating layer (16) is formed from a non-conductive powder coating which is applied to the semiconductor devices (10) by attracting the powder to the semiconductor device (10) in one of four ways. Either a fluidized powder bed process, an electrostatic fluidized bed process, an electrostatic spraying process, or the powder is applied during the mold process on the desired surface of the semiconductor device (10). Once the powder coating is applied to the heatsink (14), the semiconductor package is cured to form the insulating layer (16). The insulating layer (16) can also be formed over other portions the semiconductor device (10) such as a body (13), leads (12), or a leadframe (11).

Semiconductor device having an insulating layer and method for making

A polymeric organic coating (24) used to package a semiconductor component (10) increases voltage isolation, decreases thermal resistance, and increases scratch and abrasion resistance for the semiconductor component (10). The coating (24) is applied to a leadframe (14) of the semiconductor component (10) using a chemical grafting process that involves the use of monomers, prepolymers, a catalyst, a graft initiator, and other ingredients. The coating (24) forms a polymeric organic film that is chemically bonded to the surfaces of the leadframe (14). The chemical grafting process produces a chemical bond, which improves adhesion between the coating (24) and the leadframe (14).

Method of manufacturing semiconductor component

A method and apparatus for electroplating metallized bumps of substantially uniform height on predetermined terminal areas of a substrate. Cup plating apparatus includes elements for adjusting parameters affecting the geometry of the substrate relative to the plating cup, as well as flow rate of the electroplating solution against the substrate surface. By achieving non-laminar flow of the electroplating solution near the substrate edges, the plating characteristics of the electroplating solution are altered in this region, substantialy offsetting 'edge effect', so that the resulting plated bump height is substantially uniform across the substrate.

Method and apparatus for adjusting plating solution flow characteristics

An electrolytic process employing a water solution of metal lactates or lactic acid and metal hydroxides, rapidly and safely removes metal plating bleed, residual oxides or the like (stains), plastic flash, resin bleed and deflashing media, from electrodes of electronic devices. Anodic etching or a combination of cathodic and anodic etching is preferred. Noble metals are selectively removed without cyanide compounds. For example, excess silver from spot plating on copper leadframes is etched away 2-3 times faster than the underlying copper. After cleaning the device leads are bright, polished, stain-free and without scale, residual plating bleed, deflashing media, plastic flash or resin bleed. The process is effective, less hazardous, easy to use and economical.

Non-cyanide electrode cleaning process

Laser marking of metal surfaces, particularly semiconductor device packages, is accomplished by depositing an electroless nickel layer on the surface, converting the nickel surface to a form in which it is highly absorptive of radiant energy and exposing the converted nickel surface to laser energy through a mask. The resulting mark is highly resistant to abrasion and corrosion. In addition, the method is highly suitable for use with automated laser marking equipment. Furthermore, it appears that the presence of the converted electroless nickel surface in the region of welds increases the hermeticity of the welds. This is particularly useful in packages of the TO-3 type and similar types.

Growing community of inventors

Scottsdale, AZ, United States of America

Reginald K Asher