Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Razmick Mirzoyan

Masahiro Teshima

Boris Anatolievich Dolgoshein

Pavel Zhorzhevich Buzhan

Alexey Anatolievich Stifutkin

Valentin Nikolaevich Staroseltsev

Vladimir Alexandrovich Kaplin

Anatoliy Dmitrievich Pleshko

Stifutkin Alexey Anatolievich

Boris Anatollevich Dolgoshein

A silicon-based photoelectric multiplier comprises a plurality of cells and a number of read-out lines, and at least one of a number read-out pads or a ring-like line, wherein the plurality of cells may be divided into a number of segments, and each one of the read-out lines may be electrically connected with the cells of at least one segment.

Silicon photoelectric multiplier with multiple read-out

A cell for a silicon-based photoelectric multiplier may comprise a first layer of a first conductivity type and a second layer of a second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction. The cell may be processed by an ion implantation act wherein parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice, an absorption length of infrared light of a wavelength in a range of &#x2dc;800 nm to 1000 nm is decreased.

Silicon photoelectric multiplier

Growing community of inventors

Unterschleissheim, Germany

Razmick Mirzoyan