Semiconductor Components Industries, LLC

Rayner Barboza

Satyadev Hulikal Nagaraja

Giovanni Margutti

Image sensors may include a plurality of photodiodes. The photodiodes may be isolated from each other using isolations regions formed from p-well or n-well implants. Deep and narrow isolation regions may be formed using a multi-step process that selectively places implants at desired depths in a substrate. If desired, the multi-step process may include only one photolithographic patterning step, which in turn can help reduce costs, fabrication time, and alignment errors. The process may include passing ions through a stack of alternating layers of material such as alternating layers of oxide and nitride. After each implant, a layer in the stack may be removed and ions may be passed through the layers remaining in the stack to form an implant at a different depth in the substrate.

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Sunnyvale, CA, United States of America

Rayner Barboza