Rca Inc.

Sarnoff Corporation

Raymond Louis Camisa

Arye Rosen

John Charles Connolly

Joseph H Abeles

Franco N Sechi

Stewart Mark Perlow

William Edward Stephens

Shui Yuan

Benjamin Franklin Hitch

A tuning circuit, as for a television receiver or video recorder, employs switchable tuning circuits including micro-electronic electro-mechanical switches for selecting the ones of an array of capacitors and/or inductors as is useful in tunable circuits. The array of capacitors and/or inductors and micro-electro-mechanical switches of the switched tuning matrix is formed on an integrated circuit or an electronic circuit substrate along with amplifiers and other electronic elements of the tuning circuit for which the switched tuning matrix is employed. The switchable capacitance and inductance matrices are well suited for use in the resonators employed in the pre-selector filters, post-selector filters and oscillators of electronic tuners, such as those employed in television receivers and video recorders. The capacitors and micro-electro-mechanical switches may be connected to select a particular capacitor of the array of capacitors or to select ones of the capacitors of the array of capacitors to establish a particular capacitance value. The capacitors of the array of capacitors may be of like value or may be of different values, such as would advance simplified response to a digital control word, such as a 1-2-4-8 weighting or a 1-2-2-4 weighting. Similarly, the inductors and micro-electro-mechanical switches may be connected to select a particular inductor of the array of inductors or to select ones of the inductors of the array of inductors to establish a particular inductance value. The inductors of the array of inductors may be of like value or may be of different values, such as would advance simplified response to a digital control word, such as a 1-2-4-8 weighting or a 1-2-2-4 weighting.

Television tuner employing micro-electro-mechanically-switched tuning matrix

A multi-wavelength mode-locked dense wavelength division multiplexed (MWML-DWDM) optical transmission method and system including a MWML-DWDM optical transmitter having a multiwavelength mode-locked (MWML) laser which generates a wavelength-ordered repetitive periodic (WORP) sequence of discrete optical pulses for modulation with data carried by at least one electronic carrier. Signals from multiple telecommunications transmission interfaces are multiplexed together by a high speed electronic time domain multiplexer to form a single multiplexed high speed digital transmission stream that is encoded onto the optical pulse stream output by the MWML-DWDM optical transmitter by an optical modulator so as to provide multiple channels of information carried on a DWDM data stream over an optical fiber to a receiver where the data is received and decoded. A single MWML-DWDM optical transmitter and a single modulator may replace the numerous laser sources and associated modulators used in conventional WDM optical transmission systems. Wavelength usage may be further maximized by combining the outputs of several MWML-DWDM optical transmitters in the frequency domain using optical combiners or in the time domain using time division multiplexing techniques according to which DWDM wavelengths may be used more than once during a WORP-frame but only once during a pulse-frame. A single MWML laser source can provide hundreds of optical carriers.

Multiwavelength mode-locked dense wavelength division multiplexed

A monolithic integrated circuit comprises a substrate having first and second opposing major surfaces. A semiconductor device is at the first major surface, a circuit film pattern is on the second major surface, and means for interconnecting the device to the film pattern are provided. On the first surface, a metallization layer surrounds the device and has a thickness greater than the height of the device from the first surface. Additionally, an electrode extension projects from the device to a height substantially equal to the thickness of the metallization layer.

Monolithic integrated circuit

First and second field effect transistors (FETs) each have a gallium arsenide substrate with an N-type active region that carries first and second electrodes in ohmic contact therewith and a gate electrode. The FETs are mounted in a flip-chip carrier that connects the first electrodes to ground. The FETs are biased to cause a current to flow from the first to second electrodes, whereby the first and second electrodes serve as drains and sources, respectively, of the FETs. The gate of the first FET is connected to a resonator. Additionally, a matching network connects the source of the first FET to the gate of the second FET. The matching network and the biasing of the first FET cause the gate input impedance thereof to be of a negative value that compensates for losses in the resonator. A load connected to the source of the second FET and the bias voltage cause the second FET to have a gate input impedance of a negative value that causes oscillation.

Microwave FET power oscillator

A microwave signal phase shifter using a metal-insulator-semiconductor (MIS) device is provided. In one preferred embodiment, one end of the device is coupled to a port of a circulator and the opposite end is coupled to ground. When the diode is switched from a first reverse bias state to a second forward bias state, the network switches from a first reactance to a second reactance and the reflection coefficient phase angle shifts.

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East Windsor, NJ, United States of America

Raymond Louis Camisa