Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Dow Global Technolgoies LLC

Raymond L Lavoie, Jr

Yi Guo

Bainian Qian

Marty W DeGroot

Guangyun Zhang

Benson Lee

Jerry Lee

The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of HMDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NHto NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4'-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G&#x2032; of 250 to 350 MPa as measured with a torsion fixture at 30&#xb0; C. and 40&#xb0; C. and a shear loss modulus, G&#x2033; of 25 to 30 MPa as measured with a torsion fixture at 40&#xb0; C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm.

Polyurethane polishing pad

A composition and method for tungsten is provided comprising: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance according to formula I; and, water; wherein the polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement.

Chemical mechanical polishing composition and method for polishing tungsten

A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.

Method for chemical mechanical polishing tungsten

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Hockessin, DE, United States of America

Raymond L Lavoie, Jr