Other

Genus, Inc.

Raymond L Chow

Frank Otto Uher

Henry K Wong

Sien G Kang

Johannes J Schmitz

Norman L Turner

Steven C Selbrede

Frederick J Scholz

Edward J Rode

The present invention discloses a power management apparatus and method for devices comprising an interface module that includes receivers for receiving input signals from a device, an auto power management unit coupled with receivers for determining a state of the input signals, and outputting a power management signal based on the determined state of the input signal. Further provided is an electronic unit coupled with the auto power management unit for driving driver units, with the power management signal toggling ON/OFF a status of the electronic unit based on the determined state of the input signal to thereby reduce power utilization.

Automated power management for electronic devices

A semiconductor circuit for driving a load, comprising a transformerless Alternative Current (AC) to Direct Current (DC) converter integrated circuit that includes a high voltage circuit fabricated on a substrate for converting a high voltage AC input signal to a first high voltage DC output signal. Further included is a second circuit fabricated on the same substrate for regulating a drive signal for driving a load using power from the first high voltage output signal, with the high voltage circuit and the second circuit fabricated on the substrate to form a single integrated circuit (IC) chip.

Integrated circuit device using substrate-on-insulator for driving a load and method for fabricating the same

Apparatus including a support and purge gas supply prevents edge and backside coating on a wafer in manufacture of integrated circuits. Various enclosure elements and methods are disclosed for containing and directing purge gas, and a CVD system is provided incorporating the elements of the invention.

Purge gas in wafer coating area selection

A system for depositing a film on a substrate in a CVD process has a second-source injection sub-system for injecting a control gas. The deposition rate of the material deposited in the CVD process is a function of the concentration of the control gas at the point that material is deposited. The second source injection sub-system provides a concentration gradient of the control gas relative to the substrate surface coated, and alters the thickness uniformity of the film. By controlling the gradient one may control the thickness uniformity profile. In another embodiment, the invention applies to dry etching with reactive gas, and the etching rate is controlled by second source provision of a control gas.

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Cupertino, CA, United States of America

Raymond L Chow