Sarnoff Corporation

Trumpf Photonics, Inc.

Princeton Lightwave, Inc.

Raymond Joseph Menna

Gerard Argant Alphonse

John Charles Connolly

Joseph H Abeles

Dmitri Z Garbuzov

Ramon Ubaldo Martinelli

Robert Wallace Roff

John Hostetler

Greg W Charache

Giora Griffel

Holger Schlüter

Alan Richard Sugg

James Tynan Andrews

Ching-Long Jiang

Radosveta Radionova

Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

Laser facet passivation

A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG.B. In accordance with the principles of the invention, at least one blocking layer () is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (). In one aspect of the invention, a blocking layer () is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region () is positioned adjacent to the blocking layer () to decrease optical losses.

Method and apparatus for improving efficiency in opto-electronic radiation source devices

A semiconductor laser device includes a substrate having on a surface thereof a semiconductor diode laser portion and a linear amplifier portion. Each of the laser portion and amplifier portion has a waveguide layer with the waveguide layers being in alignment. The laser portion is of a structure which permits it to generate radiation and emit the radiation from one end. The amplifier has an end that receives the radiation from the laser portion, and another end with emits the radiation after the radiation is amplified. The device emits FM radiation but not IM radiation.

Combined single-frequency laser and linear amplifier

A closed-loop ring resonator including a closed loop formed on a substrate and including at least one coupling region having a first effective depth and at least one other region having a second effective depth, wherein the first and second depths are different.

Multi-level closed loop resonators and method for fabricating same

A semiconductor electro luminescent diode having a body of a semiconductor material with the body having a pair of spaced opposed end surfaces, side surfaces and top and bottom surfaces. The body includes therein an active layer which extends from one end surface to a point spaced from the other end surface. The active layer is of a width narrower than the distance between the side surfaces. Also, the active layer has a portion adjacent the other end surface of the body which is tapered to come to a point. First clad layers of a material having an index of refraction smaller than that of the active layer are at opposite sides of the active layer and extend between the end of the active layer and the other end surface of the body. Second clad layers of a material having an index of refraction larger than that of the first clad layers but less than the index of refraction of the active layer are on the first clad layer. Radiation generated in the active layer and emitted from the pointed end of the active layer extends in area in the portion of the second clad layer between the pointed end of the active layer and the other end of the body so that the area of the beam of radiation emitted from the -diode is larger than the area of the beam formed in the active layer.

Electroluminescent diode with mode expander

Growing community of inventors

Newtown, PA, United States of America

Raymond Joseph Menna