Avco Corporation

Specialty Materials, Inc.

Textron Systems Corporation

Iowa State University Research Foundation, Inc.

Raymond J Suplinskas

Thomas W Henze

Garrett S Thurston

Donald F Connors, Jr

Thomas J Carroll

Albert W Hauze

James A Cornie

Richard C Krutenat

David T Scaringella

Harold E DeBolt

Douglas K Finnemore

Harold E Debolt

Paul Canfield

James V Marzik

Serquei Bud′ko

Janet Suplinskas, Legal Representative

Joseph Morrissey

A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Method for the formation of doped boron

Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire

Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.

Process for the production of improved boron coatings

A porous preform is densified by heating while emersed in a precursor liquid. Heating is achieved by passing a current through the preform or by an induction coil immersed in the liquid. Ways to control the densification process are also described.

Method for densification of porous billets

In accordance with the invention there is provided a method of producing a densified carbon preform having interior a porous region of graded carbon-silicon carbide, carbon-silicon nitride or ceramic-ceramic composition.

Method of densifying porous billets

Apparatus for densification of porous billets

This invention is directed to a surface treatment for SiC monofilament developed for the purpose of increasing the transverse strain-to-failure of composites, particularly aluminum composites. The surface treatment includes a fine grain SiC region adjacent to the bulk or stoichiometric SiC region and a transition region which interacts with the matrix material.

Silicon carbide monofilament for transverse composite properties

Silicon carbide filament is produced by overcoating a carbon monofilament core using continuous process vapor deposition. The deposition takes place by passing the carbon monofilament through a reactor into which gaseous sources of silicon and carbon are injected. At a deposition temperature of about 2370.degree. F., a deposit of fine grained beta crystals of silicon carbide are formed. Application of a thin protective coating of boron-based refractory material on the surface of the silicon carbide filament both adds strength and provides a surface which is readily bonded to both metals and epoxy matrix materials during the casting of composite structures.

Boron coated silicon carbide filaments

The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.

Method of applying a carbon-rich surface layer to a silicon carbide

This invention relates to a process control system and method of controlling a chemical vapor deposition (CVD) process where a coating is deposited on a substrate heated by passing a current through the substrate to create a heating zone. The control system relies on detecting a signal induced on the coated substrate outside of the heating zone and using the induced signal to control one or more process parameters.

Process control system

Coated stoichiometric silicon carbide

Silicon carbide filament is produced by overcoating a carbon monofilament core using continuous process vapor deposition. The deposition takes place by passing the carbon monofilament through a reactor into which gaseous sources of silicon and carbon are injected. At a deposition temperature of about 1300 C., a deposit of fine grained beta crystals of silicon carbide are formed. Application of a thin coating of silicon-rich silicon carbide on the surface of the filament both adds strength and provides a surface which is readily bonded to metals, glass and resin matrix materials during the forming of composite structures.

Growing community of inventors

Haverhill, MA, United States of America

Raymond J Suplinskas