Koninklijke Philips Corporation N.V.

Raymond J E Heuting

Erwin A Hijzen

Michael A A Zandt In't

The manufacture of a vertical power transistor trench-gate semiconductor device in which the source regions ( ) are self-aligned to the trench-gate structures ( ) including the steps of forming a mask ( ) on a surface ( ) of a semiconductor body ( ), using the mask ( ) to form the trench-gate structures ( ), then using the mask ( ) to form U-shaped section layers ( A, B) of insulating material whose base portion ( B) provides a gate insulating layer on the gate material ( ), then removing the mask ( ) and forming spacers ( ) against well-defined steps provided by the upright portions ( A) of the U-shaped section layers, then using the spacers ( ) to form the source regions ( ).

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Helmond, Netherlands

Raymond J E Heuting