Hewlett-packard Development Company, L.p.

Hewlett Packard Enterprise Development LP

Leia Inc.

The Boeing Company

Hewlett-packard Company

Cygnus Laser Corporation

Other

Hewlett-packard Development, L.p.

Raymond G Beausoleil

Marco Fiorentino

David A Fattal

Charles Santori

Di Liang

Geza Kurczveil

William John Munro

Timothy Paul Spiller

Zhihong Huang

Sean Spillane

Richard Stanley Williams

Shih-Yuan Wang

Philip John Kuekes

Wei E Wu

Cheng Li

Jason Pelc

Zhen Peng

Terrel L Morris

Jingjing Li

Sean D Barrett

Alexandre M Bratkovski

Qianfan Xu

Kae Nemoto

Theodore I Kamins

Nathan Lorenzo Binkert

Thomas Van Vaerenbergh

Kai-Mei Camilla Fu

Norman Paul Jouppi

Paul Kessler Rosenberg

Duncan R Stewart

Mir Ashkan Seyedi

Chin-Hui Chen

Ashkan Seyedi

Andrei Faraon

Tsung-Ching Huang

David Kielpinski

Ranojoy Bose

Michael Renne Ty Tan

Zhiyong Li

Wei Guang Wu

M Saif Islam

Mihail Sigalas

Marco Florentino

Adrian P Kent

Nikolas Anton Tezak

Sagi Varghese Mathai

Robert S Schreiber

Moray McLaren

Stanley Cheung

Yuan Yuan

Jason Blackstock

Chong Zhang

Pieter Kok

Nate Quitoriano

John Paul Strachan

Keith Alexander Harrison

Brian M Taff

Alan Lynn Davis

Victor Marcel Acosta

Robert Newton Bicknell

Xiaoge Zeng

Sudharsanan Srinivasan

Michael W Cumbie

Li Zhang

Scott W Corzine

Michael R Tan

Naveen Muralimanohar

Gregory Stuart Snider

Ross R Allen

Nathan McPherson Moroney

Peter George Hartwell

Tad H Hogg

Robert G Walmsley

Charles F Clark

James A Brug

Jun Gao

Carl E Picciotto

Miao Hu

Sheng Li

Lars Helge Thylen

Nathaniel Quitoriano

William M Tong

Irwin E Sobel

Julien Borghetti

Kay-Yut Chen

Benjamin P Bauermeister

Clyde D McQueen

Anna Pyayt

Yiwei Peng

Greg Astfalk

Sagi Mathal

Norm Jouppi

David A Leep

William R Babbitt

John A McGarvey

Tsung Ching Huang

Bassem Tossoun

Peng Sun

Rui Wu

One aspect can provide a method for fabricating a photonic integrated circuit (PIC) with an embedded optical power monitor. The method can include creating a photomask based on a design of the PIC, the photomask comprising a pattern defining an optical waveguide for embedding the optical power monitor. Creating the photomask can include introducing a predetermined level of roughness along at least one edge of the pattern defining the optical waveguide. The method can further include fabricating the PIC, which can include using the photomask to create the optical waveguide with the introduced roughness on a sidewall corresponding to the edge of the pattern, thereby allowing light absorbed by the roughness to create free carriers for detection by the optical power monitor.

Hitless optical power monitor

Examples of the present technology provide 'tensorized' integrated coherent Ising machines that improve scalability by leveraging a tensorized optical coupling matrix comprising layers of multi-wavelength photonic tensor-train (TT) cores cascaded together via passive optical cross-connects. A multi-wavelength photonic TT core may comprise a Mach Zehnder interferometer (MZI) mesh (i.e., a lattice/array of interconnected MZIs) that modulates the phase and/or amplitude of optical signals. Tensorized integrated CIMs of the present technology can achieve further scalability optimizations by implementing bistable Ising nodes via one or more multi-wavelength Ising node collections. A multi-wavelength Ising node collection may comprise a bistable Ising nodes implemented on a common MZI, where each bistable Ising node of the multi-wavelength Ising node collection is associated with a separate wavelength of light.

Tensorized integrated coherent Ising machine

Systems, devices, and methods are provided for built-in redundancy in optical devices that output an optical signal, for example, to photonic integrated circuits. The device and systems disclosed herein include a plurality of optical sources coupled to a plurality of waveguides. Each adjacent pair of the plurality of waveguides are coupled to an optical switching devices that comprises an interferometer having a first branch comprising a phase-shift mechanism coupled to one waveguide of the pair of waveguides. A voltage bias can be applied to the phase-shift mechanisms to tune a respective phase difference and direct an optical signal from any of the plurality of optical sources to the output end of the optical device. According to various examples disclosed herein, the phase-shift mechanisms comprises metal oxide semiconductor (MOS) capacitors.

Optical devices and systems for optical source redundancy

Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

Hybrid metal oxide semiconductor capacitor with enhanced phase tuning

Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.

Parity time symmetric directional couplers with phase tuning

In one example, a device to process analog sensor data is described. For example, a device may include at least one analog sensor to generate a first set of analog voltage signals and a crossbar array including a plurality of memristors. In one example, the crossbar array is to receive an input vector of the first set of analog voltage signals, generate an output vector comprising a second set of analog voltage signals that is based upon a dot product of the input vector and a matrix comprising resistance values of the plurality of memristors, detect a pattern of the output vector, and activate a processor upon a detection of the pattern.

Memristor crossbar arrays to activate processors

Narrow-optical linewidth laser generation devices and methods for generating a narrow-optical linewidth laser beam are provided. One narrow-optical linewidth laser generation devie includes a single-wavelength mirror or multiwavelength mirror (for comb lasers) formed from one or more optical ring resonators coupled with an optical splitter. The optical splitter may in turn be coupled with a quantum dot optical amplifier (QDOA), itself coupled with a phase-tuner. The phase tuner may be further coupled with a broadband mirror. The narrow-optical linewidth laser beam is generated by using a long laser cavity and additionally by using an integrated optical feedback.

Quantum-dot-based narrow optical linewidth single wavelength and comb lasers on silicon

Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.

Quantum-dot photonics

Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.

Injection seeding of a comb laser

Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.

Low drive voltage multi-wavelength transmitter

Processes and apparatuses described herein provide for an efficient cyclical fiber-optic connection between a source component and multiple destination components in a computing environment. A comb laser generates a laser signal that includes laser light of a first frequency that is red-shifted from a carrier frequency. The comb laser concurrently transmits the laser signal to four ring resonators via an optical waveguide. Three of the ring resonators are initially configured for optical resonance at a second frequency that is blue-shifted from the carrier frequency, while one of the ring resonators is initially configured for optical resonance at the first frequency. The laser signal is modulated to communicate data to a first target location associated with the ring resonator that is initially configured for optical resonance at the first frequency.

Systems for efficient cyclical fiber-optic connections

Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Multi-wavelength semiconductor comb lasers

A Dense Wavelength Division Multiplexing (DWDM) photonic integration circuit (PIC) that implements a DWDM system, such as a transceiver, is described. The DWDM PIC architecture includes photonic devices fully integrating on a single manufacturing platform. The DWDM PIC has a multi-wavelength optical laser, a quantum dot (QD) laser with integrated heterogeneous metal oxide semiconductor (H-MOS) capacitor, integrated on-chip. The multi-wavelength optical laser can be a symmetric comb laser that generates two equal outputs of multi-wavelength light. Alternatively, the DWDM PIC can be designed to interface with a stand-alone multi-wavelength optical laser that is off-chip. In some implementations, the DWDM PIC integrates multiple optimally designed photonic devices, such as a silicon geranium (SiGe) avalanche photodetector (APD), an athermal H-MOS wavelength splitter, a QD photodetector, and a heterogenous grating coupler. Accordingly, fabricating the DWDM PIC includes a unique III-V to silicon bonding process, which is adapted for its use of SiGe APDs.

Dense wavelength division multiplexing (DWDM) photonic integration platform

In example implementations, an apparatus includes a plurality of nodes, a pump coupled to the plurality of nodes and a connection network. In one example, each one of the plurality of nodes may store a value. The pump provides energy to the each one of the plurality of nodes. The connection network may include a two dimensional array of elements, wherein each group of the two dimensional array of elements is in communication with a respective one of the plurality of nodes, wherein the connection network may be tuned with parameters associated with encoding of an Ising problem. The connection network may process the value stored in each one of the plurality of nodes. The Ising problem may be solved by the value stored in each one of the plurality of nodes at a minimum energy level.

Apparatus for solving Ising problems

An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.

Doped absorption photodiode

Growing community of inventors

Redmond, WA, United States of America

Raymond G Beausoleil