Element Six Technologies Limited

Element Six (uk) Limited

Element Six Gmbh

Baker Hughes Holdings LLC

Raymond Anthony Spits

Carlton Nigel Dodge

Changzheng Ji

Nicholas J Lyons

Dietrich Borse

Rachael Fiona Ambury

Nedret Can

Konrad Izbinski

Gerard Dolan

Thomasz Zbyszko Rybak

Eugen Gura

Emilio Lopez Lopez

A polycrystalline super hard construction has a first region having a body of thermally stable polycrystalline super hard material having a plurality of intergrown grains of super hard material; a second region forming a substrate having a hard phase and a binder phase; and a third region interposed between the first and second regions. The third region includes a composite material having a first phase comprising a plurality of non-intergrown grains of super hard material, and a matrix material. A fourth region interposed between the second and third region has a major proportion having one or more components of the binder material of the second region, and one or more reaction products between the binder material of the second region and one or more components of the third region.

Superhard constructions and methods of making same

A cutter element for an earth-boring tool, comprising a polycrystalline diamond (PCD) volume joined at an interface boundary to a cemented carbide substrate. The PCD volume includes a rake face opposite the interface boundary, an edge of the rake face being suitable as a cutting edge of the cutter element. The PCD volume comprises a plurality of strata directly joined to each other at inter-strata boundaries, in which each of a first plurality of the strata comprises PCD material having a first diamond content; each of a second plurality of the strata comprises PCD material having a second diamond content; the second diamond content being greater than the first diamond content; and the strata of the first and second pluralities disposed in an alternating arrangement with respect to each other. The strata are configured and arranged such that a radial line through the edge and a centroid of the interface boundary intersects, within 1,000 microns from the edge, each of the inter-strata boundaries, and the respective tangent plane to each inter-strata boundary at the respective intersection is disposed relative to the radial line at no less than a minimum angle of 30&#xb0;.

Polycrystalline diamond cutter element and earth boring tool

A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by reducing pressure and temperature, wherein the plurality of single crystal diamond seeds remain anchored to, or embedded in, the inert holders during the HPHT growth cycle.

Process for manufacturing synthetic single crystal diamond material using a pressure driven growth process and a plurality of seed pads with each seed pad comprising a plurality of single crystal diamond seeds

A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilized is described. The growth is effected at a temperature in the range from 1280&#xb0; C. to 1390&#xb0; C.

High pressure high temperature (HPHT) method for the production of single crystal diamonds

The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a &#x3c;100&#x3e; or &#x3c;110&#x3e; direction in the plane of the growth surface.

Diamond

Growing community of inventors

Oxfordshire, United Kingdom

Raymond Anthony Spits