Commissariat a L'energie Atomique Et Aux Energies Alternatives

Rayisa Voytovych

Jean-Paul Garandet

Denis Camel

Béatrice Drevet

Nicolas Eustathopoulos

Charles Huguet

Johann Testard

Philippe Emonot

Grégory Largiller

A method for joining, by brazing, a first part and a second part, the steps of preparing at least one of the parts including the following: a) providing a part intended to be brazed, the part being made of carbon or based on titanium, nickel or a CoCr alloy, b) performing inert gas plasma treatment on the part whereby the part is cleaned and an active surface is formed on the part, c) depositing a first layer comprising an active element on the active surface of the part, the active element being a carbide-forming element, d) depositing a second layer of gold on the first layer, whereby the first layer is protected from oxidation and good wetting is ensured.

Method for joining, by direct brazing, a first part and a second part, including steps of preparing the surface of at least one of the parts

A substrate characterised in that it is at least partially surface-coated with a coating containing at least one so-called 'barrier' layer having silica and one or more material(s) X selected from among SiC, Si, SiN, in which layer the amount of X varies between 25-wt. % and 50.-wt. % in relation to the total weight of the barrier layer, the barrier layer being formed by grains of one or more materials X covered at least partially in a silica shell, and the barrier layer being in direct contact with the substrate.

Substrate with low-permeability coating for the solidification of silicon

A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.

Substrate for solidifying a silicon ingot

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Echriolles, France

Rayisa Voytovych