National Chung Hsing University

Other

National Yang Ming Chiao Tung University

Phostek, Inc.

Ncku Research and Development Foundation

Au Optronics Corporation

Kabushiki Kaisha Toshiba

National Cheng-kung University

Taiwan Carol Electronics Co., Ltd

Pinecone Energies, Inc.

Aker Technology Co., Ltd.

Bridgelux Incorporated

Sct Incorporated

Ray-hua Horng

National Chung-hsien University

Ray-Hua Horng

Dong-Sing Wuu

Yi-An Lu

Shao-Hua Huang

Tung-Hsing Wu

Heng Liu

Chi-Ying Chiu

Ken-Yen Chen

Dong-Sing Wu

Huan-Yu Chien

Chao-Kun Lin

Chao-Chih Chang

Yann-Jyh Chiang

Tsung-Yen Tsai

Chuang-Yu Hsieh

Wei-Ting Lin

Meng-Chai Wu

Chia-Cheng Wu

Jean-Yih Tsai

Woei-Kai Wang

Ming-Chun Tseng

Po-Wei Chen

Yi-Lun Lin

Eric Li

Meng-chai Wu

Wen-Chun Chen

Cheng-Yu Chung

Shuo-Huang Yuan

Hsiang-An Feng

Shih-Ting Chen

Fu-Gow Tarntair

Tshung-Han Tsai

Hsueh-Wei Wu

Shih-Hao Chuang

Dong Sing Wuu

Cheng-Chung Chiang

Kuo-Sheng Wen

Chung-Chin Lai

Ji-Liang Chen

Fan-Lei Wu

Zong-Ying Lin

Chih-Ru Chung

Tsing-Ping Liao

Po-Chou Pan

Juin-Jer Yang

Po-Rung Lin

Cheng-Ying Yen

Ming-Li Ke

Guan-Wei Chen

Chia-Wei Tu

Yao-Cheng Tsai

A crystal oscillator includes a piezoelectric substrate having a thinned portion with opposite upper and lower surfaces respectively defining upper and lower surface work portions, and at least one side portion having at least one recessed portion with a bottom surface flush with the upper surface of the thinned portion. A top electrode layer has a top work portion disposed on the upper surface work portion, and a top extension extending from the top work portion onto the bottom surface of the recessed portion. A bottom electrode layer has a bottom work portion disposed on the lower surface work portion, and a bottom extension extending from the bottom work portion toward the one end of the thinned portion and then bending upward and inward onto the bottom surface of the recessed portion. A method of making the crystal oscillator is also disclosed.

Crystal oscillator and method of making the same

A crystal oscillator includes an oscillating substrate, a hollow frame, a first electrode, and a second electrode. The oscillating substrate includes a main oscillating region and a thinned region that has a thickness smaller than that of the main oscillating region. The first and second electrodes are disposed on a first surface of the oscillating substrate and a second surface opposite to the first surface, respectively. The hollow frame is disposed on the second surface. The second electrode includes a second electrode portion that has at least one opening in positional correspondence with the thinned region. A method for making the crystal oscillator is also provided herein.

Crystal oscillator, and method for making the same

A light emitting diode device with flip-chip structure includes a transparent protective substrate, a transparent conductor layer, a glue layer, a group III-V stack layer, a first conductivity metal electrode, a second conductivity metal electrode and an insulating layer. The transparent conductor layer is formed on the transparent protective substrate. The glue layer bonds the transparent protective substrate and the transparent conductor layer. The group III-V stack layer and the first conductivity metal electrode are respectively formed on a first portion and a second portion of the transparent conductor layer. The second conductivity metal electrode is formed on a portion of the group III-V stack layer. The insulating layer covers exposed portions of the transparent conductor layer and the group III-V stack layer, and the insulating layer further covers portions of the first and second conductivity metal electrodes, so as to expose the first and second conductivity metal electrodes.

Light emission diode with flip-chip structure and manufacturing method thereof

A multi-functional control device includes a casing unit, and press button modules disposed on a main circuit board in the casing unit. Each press button module includes a sub-circuit board connected to the main circuit board, a micro-contact switch mounted on the sub-circuit board, an auxiliary case removably mounted on the micro-contact switch, a driving circuit board removably disposed in the auxiliary case to connect the sub-circuit board, a display module removably disposed on the auxiliary case. A transparent cap covers the display module and the auxiliary case, and is detachably connected to the auxiliary case.

Multi-functional control device with display buttons

A large area passive micro light-emitting diode matrix display includes a plurality of micro light-emitting diode matrices and an external circuit component. Each of the micro light-emitting diode matrices includes a first layer, a plurality of light-emitting layers disposed on the first layer, a plurality of second layers disposed on the light-emitting layers, respectively, a plurality of first inner electrode layers disposed on the second layers, respectively, and a second inner electrode layer which is disposed on the first layer, and which includes a first portion and a second portion having a plurality of through holes to accommodate said light-emitting layers, respectively.

Large area passive micro light-emitting diode matrix display

A passive micro light-emitting diode matrix device with uniform luminance includes a micro light-emitting diode matrix including a plurality of micro light-emitting matrices, each of which includes a first layer, a plurality of light-emitting layers disposed on the first layer, a plurality of second layers disposed on the light-emitting layers, respectively, a plurality of first inner electrode layers disposed on the second layers, respectively, and a second inner electrode layer which is disposed on the first layer, and which includes a first portion and a second portion having a plurality of through holes to accommodate said light-emitting layers, respectively.

Passive micro light-emitting diode matrix device with uniform luminance

A thermal dissipation structure for integrated circuits includes a semiconductor substrate, a thermal dissipation trench, a metal seed layer and a metal layer. The semiconductor substrate has a first surface and a second surface which is opposite to the first surface. Integrated circuits are located on and thermally coupled with the first surface. The thermal dissipation trench is formed within the second surface. The metal seed layer seals the thermal dissipation trench to define a thermal dissipation channel. The thermal dissipation channel includes an inlet and an outlet. The metal layer is an electroplated layer formed from the metal seed layer.

Thermal dissipation structure for integrated circuits comprising thermal dissipation trench

A method for manufacturing micro light-emitting diode chips includes the steps of: providing a to-be-divided light-emitting component, which includes a metal substrate and a plurality of micro light-emitting diode dies disposed on the metal substrate to permit the metal substrate to define a to-be-etched region among the micro light-emitting diode dies; and etching the metal substrate to remove the to-be-etched region so as to divide the light-emitting component into a plurality of the micro light-emitting diode chips.

Method for manufacturing micro light-emitting diode chips

A monolithic Light Emitting Diode (LED) micro-display contains one or more modular LED arrays. The LED array uses quantum dot light conversion technology or Organic Light Emitting Diode (OLED). The micro-display has a spacing-saving topology and a direct current driver architecture. Its modular design is scalable, which allows manufacturing micro-displays of various sizes using the same module.

Integrated multilayer monolithic assembly LED displays and method of making thereof

An electrodeless LED display and a method for fabricating the same are disclosed. In the method, an epitaxial layer is provided and a transparent conduction layer is formed on the epitaxial layer to bond a substrate. The epitaxial layer is etched to form dies deposition metal films on the transparent conduction layer. Conduction channels are formed on the substrate, and two ends of each conduction channel are respectively provided two conduction metal blocks. First metal members are formed on the metal film formed on the dies and the conduction metal blocks to connect with the dies on the different conduction channels. Then, second metal members are formed on the first metal members formed on the conduction metal blocks, whereby the second metal members and the first metal members formed on the dies are located on an identical plane.

Electrodeless light-emitting diode display and method for fabricating the same

A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm.

Patterned substrate for epitaxially growing semiconductor material, and method for patterning a substrate

This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.

Light-emitting chip device with high thermal conductivity

A light emitting device includes: a light emitting layered structure; an electrode unit connected to the light emitting layered structure and including a transparent electrode layer of a primary metal oxide which is stacked on the light emitting layered structure along a stacking direction; and a total-internal-reflection suppression material dispersed in the transparent electrode layer and containing a secondary metal oxide that is different from the primary metal oxide. The secondary metal oxide has a concentration gradient within the transparent electrode layer along the stacking direction. The light output power of the light emitting device may be increased by about 44% as compared to a conventional light emitting device.

Light emitting device with anti-total-internal-reflection capability

Growing community of inventors

Taichung, Taiwan

Ray-Hua Horng