The Chemours Company Fc, LLC

Win Semiconductors Corp.

Ray Chen

Xudong Chen

Walter Tony Wohlmuth

Shih-Hui Huang

Gin Tsai

Liang-Feng Shen

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to &#x2212;5&#xd7;10dyne/cmand less than or equal to 5&#xd7;10dyne/cm.

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Taoyuan, Taiwan

Ray Chen