Duraflex Hong Kong Limited

Mosel Vitelic Corporation

Promos Technologies, Inc

Other

Siemens Aktiengesellschaft

Promos Technology, Inc.

Slemens Ag

Ray C Lee

Kuo-Tung Sung

Nien-Yu Tsai

Hong-Long Chang

Pao-Chu Chang

Hung-Yueh Lu

Marlon Tsai

Wen-Yi Tan

Troy Chen

Te-Hsun Pang

Jen-Hui Hsiao

Mu-Tsun Ting

Lin Ming Hung

Ming-Horng Lin

Tonny Shu

Shih-Po Lin

Jim Ho

Birdson Lee

Ming-Hong Lin

Buckle

Cam buckle

A buckle assembly formed of a male buckle portion and a female buckle portion. The female buckle portion has a top wall, a bottom wall, side walls, and a cavity between the top wall and the bottom wall and a locking slot in each of the side walls. The male buckle portion has a base, two locking legs, a center leg, and two intermediate legs between the locking legs and the center leg. The locking legs extend through the locking slots in the female portion, and locking pawls at the end of the locking legs engage the edges of the locking slots to secure the buckle portions together. Each locking leg is connected to a flexible retaining member that prevents the locking legs from being flexed outwardly beyond a predetermined point. The intermediate legs and/or the retaining members form stop surfaces that prevent the locking legs from being flexed inwardly beyond a point of contact with the stop surfaces.

Buckle assembly

Female buckle

Female buckle portion

Snap button

A method and resulting integrated circuit device ( ) such as a flash memory device and resulting cell. The method includes a step of providing a substrate ( ), which has an active region overlying a thin layer of dielectric material ( ). The method uses a step of forming a floating gate layer ( ) overlying the thin layer of dielectric material ( ), which is commonly termed a &ldquo;tunnel oxide&rdquo; layer, but is not limited to such a layer or material. The floating gate layer ( ) has novel geometric features including slant edges ( ), which extend to the dielectric material ( ). The slant edges ( ) create a smaller geometric area for the tunnel oxide region relative to the area between the floating gate layer and the control gate layer.

Method and device for producing undercut gate for flash memory

A method of patterning a metal line and removing the polymer layer that forms on the metal lines sidewalls in an important post etch-polymer removal step (e.g., step 4). A semiconductor structure and an overlying dielectric layer, a first barrier layer, a metal layer; a second barrier layer and resist pattern are provided. A four step etch process is performed in sequence in the same etch chamber. In a first etch step (A), we etch through the second barrier layer using a B and Cl containing gas and a Cl containing gas in a reactive ion etch to form a first polymer layer over the sidewall of the second barrier layer. In a second etch step (B), the metal layer is etched exposing the first barrier layer to form a second polymer over the first polymer and the sidewall of the metal layer; the second etch step performed using a B and Cl containing gas and a Cl containing gas. In a third etch step (C), the first barrier layer is etched to form a third polymer layer over the first and second polymer layers. The third etch step is performed using a B and Cl containing gas and a Cl containing gas. In an important fourth etch step (D), we remove the first, second and third polymers; the fourth etch step performed using only chlorine containing gas (Cl ) gas and a fluorocarbon containing gas.

Defects reduction for a metal etcher

An apparatus is provided for treating a wafer under fabrication with an erosive plasma, in a contamination controlled environment. The apparatus includes a chamber for containing the wafer to be treated by the plasma, and for isolating the wafer from contaminants external to the chamber during treatment. The chamber also includes one or more plasma erosion resistive screws. Each screw has a shaft secured within the chamber so that the shaft is unexposed to the plasma, and a raised head which is integral with, and made of the same material as, the shaft. The head has a continuous, surface shape with a reduced number of edges so as to reduce the accumulation of charge thereon, thereby resisting erosion by the plasma.

Plasma chamber with erosion resistive securement screws

A method to fabricate bottle-shaped deep trench into a semiconductor substrate. After a neck profile is formed, the chlorine gas at a predetermined flow rate is added to the etching plasma gas composition, while the flow rates of the plasma gases are increased by about 30% by volume, to create an enlarged lower portion of the deep trench. Preferably, the neck portion is etched using an etching composition which contains HBr, NF,, and (He/O,) provided at flow rates of about 87:13:35 sccm. The enlarged lower portion is etched using an etching composition which contains HBr, NF,, and (He/O,) provided at flow rates of about 113&plusmn;12:17&plusmn;2:46&plusmn;5 sccm, and Cl,provided at a flow rate between 10 and 40 sccm. It was found that the width of the lower portion of the deep trench can be increased by 100% with minimum side effects such as polymer deposition in the plasma chamber, which could occur as result of substantially increased flow rate of HBr and/or NF,.

Deep trench bottle-shaped etching using Cl2 gas

A plasma erosion resistive clamping ring is provided for clamping a wafer in a plasma treatment chamber. The plasma erosion resistive clamping ring comprises a ring and one or more tips secured to, and mutually spaced apart about, a circumference of the ring. Each of the tips projects away from the ring, in a radial direction, towards an interior of the ring. Each tip has plural side surfaces that taper to, and meet, a single, continuous surface of rotation. The surface of rotation is located in the interior of the ring at a location of the tip which is radially most distant from the ring. The meeting of the tapered sides at the single continuous surface of rotation has a cross-section, taken in a plane of the ring, as follows. The cross-section comprises first and second line segments, on lines that intersect at an acute angle, and an arc of a convex ellipse, that begins at an end of the first line segment most distant from the ring, and ends at an end of the second line segment most distant from the ring.

Plasma chamber wafer clamping ring with erosion resistive tips

A method and resulting integrated circuit device (100) such as a flash memory device and resulting cell. The method includes a step of providing a substrate (115), which has an active region overlying a thin layer of dielectric material (113). The method uses a step of forming a floating gate layer (107) overlying the thin layer of dielectric material (113), which is commonly termed a 'tunnel oxide' layer, but is not limited to such a layer or material. The floating gate layer (107) has novel geometric features including slant edges (121), which extend to the dielectric material (123). The slant edges (121) create a smaller geometric area for the tunnel oxide region relative to the area between the floating gate layer and the control gate layer.

A clamp affixes a wafer by entirely covering the edge of the wafer, wherein the radius of the inner surface of the clamp is about 1 mm shorter than the radius of the wafer. Besides, there are four pairs of square protuberances distributed even along the inner surface of the clamp for affixing the wafer, wherein the square protuberances only hold the edge of the device regions of the wafer. Even though the wafer is slightly off position, the square protuberances are still able to affix the wafer properly. In addition, the lifetime of the clamp of the invention is about 100 hours, which is two times of a conventional clamp, so that the cost is reduced.

Clamp for affixing a wafer in an etching chamber

Growing community of inventors

Hsinchu, Taiwan

Ray C Lee