Northern Lights Semiconductor Corp.

Ray Buske

James Chyi Lai

Vicki Wilson

Guoqing Zhan

A conductive plug located in a planar dielectric layer, under GMR memory cells, are used to directly connect the lower ferromagnetic layer of one of the GMR memory cell and a conductive layer under the planar dielectric layer.

Interconnect for a GMR memory cells and an underlying conductive layer

A giant magnetoresistance (GMR) pad on the same level of GMR memory bit layer is used as an intermediate connection for plugs between the GMR pad and an underlying diffusion metal layer. A single large power metal plug is used to connect the GMR pad and the overlying power plane metal.

Interconnect connecting a diffusion metal layer and a power plane metal and fabricating method thereof

A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via.

Growing community of inventors

Saint Paul, MN, United States of America

Ray Buske