Avalanche Technology, Inc.

Ravishankar Tadepalli

Ngon Van Le

Parviz Keshtbod

Berhanu Iman

Rajiv Yadav Ranjan

Ebrahim Abedifard

Siamack Nemazie

Mehdi Asnaashari

The present invention is directed to a method for booting a system-on-chip (SoC) including the steps of directly executing a boot software from an on-chip magnetic random access memory (MRAM) residing on a same semiconductor as the SoC; directly executing an operating system software from an external MRAM by the SoC without loading the operating system into a volatile memory; and directly executing an application software from the external MRAM by the SoC, wherein the external MRAM is coupled to the SoC and is configured for storing the operating system software and the application software.

Method of implementing magnetic random access memory (MRAM) for mobile system-on-chip boot

The present invention is directed to a method for booting a system-on-chip (SoC) including the steps of directly executing a boot software from an on-chip magnetic random access memory (MRAM) residing on a same semiconductor as the SoC; storing an operating system (OS) software and an application software on an external MRAM; directly executing the operating system software from the external MRAM by the SoC without loading the operating system into a volatile memory; directly executing the application software from the external MRAM by the SoC, wherein the external MRAM is coupled to the SoC and is configured for permanently storing the operating system software and the application software.

The present invention is directed to a magnetic memory device comprising a memory array structure that includes a first memory array comprising a first plurality of memory cells and a second memory array comprising a second plurality of memory cells. Each memory cell of the first and second plurality of magnetic memory cells includes a magnetic memory element and a two-terminal selector coupled in series. The memory array structure further includes a first multiplexer coupled to a third plurality of first conductive lines with each line connected to a respective column of the first plurality of memory cells; a second multiplexer coupled to a fourth plurality of first conductive lines with each line connected to a respective column of the second plurality of memory cells; a sense amplifier, whose input is connected to the output of the first multiplexer and the output of the second multiplexer; and one or more latches coupled to the sense amplifier.

Magnetic memory emulating dynamic random access memory (DRAM)

The present invention is directed to a computer subsystem that includes a central processing unit (CPU); one or more byte-addressable memory modules having a dual in-line memory module (DIMM) form factor connected to the CPU via a first memory channel; and a master persistent memory module and one or more slave persistent memory modules having the DIMM form factor connected to the CPU via a second memory channel. The master persistent memory module and the one or more slave persistent memory modules are connected in a daisy chain configuration. The one or more slave persistent memory modules receive commands directly from the master persistent memory module.

Serial link storage interface (SLSI) hybrid block storage

The present invention is directed to a storage device including a storage media and a controller coupled thereto through a high speed interface. The storage media includes one or more byte-addressable persistent memory devices, one or more block-addressable persistent memory devices, a hybrid reserved area spanning at least a portion of the one or more byte-addressable persistent memory devices, and a hybrid user area spanning at least a portion of the one or more block-addressable persistent memory devices. The controller uses the hybrid reserved area to store private data. Each of the one or more byte-addressable persistent memory devices may include one or more magnetic random access memory (MRAM) arrays. Each of the one or more block-addressable persistent memory devices may include one or more NAND flash memory arrays. The high speed interface may be a universal flash storage (UFS) interface that operates in the full-duplex mode.

Management of memory array with magnetic random access memory (MRAM)

A method of booting a system on chip (SoC) includes using an on-chip MRAM located in the SoC, to store a boot software that includes a start-up software, boot loaders, and kernel and user-personalized information in an on-chip magnetic random access memory (MRAM) located in and residing on the same semiconductor as the SoC. The method further includes directly executing the boot software from the on-chip MRAM by the SoC and directly accessing the user-personalized information from the MRAM by the SoC.

Method of implementing magnetic random access memory (MRAM) for mobile system-on chip boot

A hybrid non-volatile memory device includes a non-volatile random access memory (NVRAM) having an array of magnetic memory elements, the NVRAM being bit-accessible. The hybrid non-volatile device further includes a non-volatile page-mode memory (PMM) made of resistive memory and organized into pages, the non-volatile PMM being page-accessible. Further included in the hybrid non-volatile memory device is a direct memory access (DMA) engine that is coupled to the NVRAM and the non-volatile PMM and transfers data between the NVRAM and the non-volatile PMM during a DMA operation.

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Fremont, CA, United States of America

Ravishankar Tadepalli